Analog Devices - HMC8415LP6GE

MAX2640AUT+T by Analog Devices is a wide band low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm, operates on 3/5 V supplies, and draws a max current of 7.8 mA. This component is ideal for RF and microwave applications requiring surface mounting in temperatures ranging from -40°C to 125°C.

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 5000 MHz;

Broadcom's MSA-1105-STRG is a RF & Microwave Amplifier with 10dB gain, operating from 50MHz to 1300MHz. Featuring a max input power of 13dBm and VSWR of 1.7, it is ideal for wideband low-power applications requiring a characteristic impedance of 50Ω.

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

HMC636ST89 by Analog Devices is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications, this component is designed for surface mounting in RF and microwave systems.

Analog Devices' HMC963LC4TR is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It features a max input power of 0 dBm, 3.5V supply voltage, and ceramic package ideal for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Maximum Operating Temperature: 50 Cel; Maximum Input Power (CW): 13 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz; Minimum Operating Frequency: 10 MHz;

WIDE BAND MEDIUM POWER;

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;

XB1007-QT-0G0T by M/a-com Technology Solutions is a GAAS wide band medium power RF amplifier with a gain of 23 dB. It operates at frequencies ranging from 4000 MHz to 11000 MHz and can handle a max input power of 20 dBm. This surface mount component is suitable for applications in RF and microwave amplification.

Broadcom's MGA-72543-BLKG is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package body, matte tin terminal finish, and operates on a 3V power supply.