Analog Devices - HMC8500LP5DETR

  1. Home
  2. Analog Devices - HMC8500LP5DETR
HMC8500LP5DETR by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC8500LP5DETR
Description WIDE BAND HIGH POWER;
Datasheet HMC8500LP5DETR Datasheet
In Stock1,026
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND HIGH POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,026 - -

Popular Products

Category Top Products

MGA-565P8-BLK by Agilent Technologies

MGA-565P8-BLK

Agilent Technologies

WIDE BAND LOW POWER; Maximum Operating Frequency: 3500 MHz; Maximum Voltage Standing Wave Ratio: 2; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Gain: 20 dB;
LEE-39 by Mini-circuits

LEE-39

Mini-circuits

Mini-circuits LEE-39 is a wide band low power RF amplifier with 18.5 dB gain, handling up to 13 dBm CW input power. Featuring a VSWR of 1.6, it operates from -40°C to 85°C, making it ideal for various RF and microwave applications up to 8 GHz.
HMC429LP4E by Analog Devices

HMC429LP4E

Analog Devices

Analog Devices' HMC429LP4E is a RF & Microwave Amplifier with VSWR of 2, operating from -40°C to 85°C. It's a narrow band low power device with 50 ohm impedance, covering frequencies from 4450 MHz to 5000 MHz. Ideal for applications requiring precise amplification in RF and microwave systems.
HMC441LP3E by Hittite Microwave

HMC441LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 13500 MHz;
HMC465LP5E by Analog Devices

HMC465LP5E

Analog Devices

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
HMC462LP5E by Hittite Microwave

HMC462LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.
CMD317C4 by Qorvo

CMD317C4

Qorvo

WIDE BAND LOW POWER;
CMD318P3 by Qorvo

CMD318P3

Qorvo

WIDE BAND LOW POWER;
HMC311SC70E by Hittite Microwave

HMC311SC70E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11 dB;
HMC462LP5E by Analog Devices

HMC462LP5E

Analog Devices

HMC462LP5E by Analog Devices is a wide band low power RF amplifier with 10 dB gain. It operates from 2-20 GHz, handling up to 18 dBm CW input power. This component, made of GaAs technology, is ideal for RF and microwave applications requiring surface mounting features.
AG302-86G by Triquint Semiconductor

AG302-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
XP1050-QJ-0G0T by M/a-com Technology Solutions

XP1050-QJ-0G0T

M/a-com Technology Solutions

XP1050-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain. It operates b/w 7-9 GHz, handles up to 25 dBm CW input power, and can withstand temperatures from -40 to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
TQP7M9102-PCB900 by Qorvo

TQP7M9102-PCB900

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
XB1007-QT-0G00 by Mimix Broadband

XB1007-QT-0G00

Mimix Broadband

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 4000 MHz; Gain: 23 dB; Maximum Operating Frequency: 11000 MHz; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
SMA70-2 by M/a-com

SMA70-2

M/a-com

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;
AD8350ARZ15-REEL7 by Analog Devices

AD8350ARZ15-REEL7

Analog Devices

AD8350ARZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
MGA-31189-BLKG by Broadcom

MGA-31189-BLKG

Broadcom

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
HMC-ALH140 by Analog Devices

HMC-ALH140

Analog Devices

Analog Devices' HMC-ALH140 is a GAAS wide band low power RF amplifier with 10 dB gain, operating from 24-40 GHz. It has a max input power of 6 dBm, operates on 4V supply, and draws up to 100 mA current. Ideal for RF & microwave applications requiring high frequency amplification in extreme temperature conditions.
MW7IC930NR1 by NXP Semiconductors

MW7IC930NR1

NXP Semiconductors

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.