Analog Devices - MAX2611EUS+

RF/Microwave Amplifiers;

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;

MGA-86563-TR1G by Broadcom is a wide band low power RF amplifier with a gain of 13.7 dB. It operates at frequencies ranging from 500 MHz to 6000 MHz and can handle a max input power of 13 dBm. This surface mount component is commonly used in RF and microwave applications requiring amplification within the specified frequency range.

The Mini-circuits MAR-3SM is a wide band low power RF amplifier with 8 dB gain and 50 ohm impedance. It operates from 0 to 2000 MHz, handling up to 13 dBm input power. Ideal for RF & microwave applications requiring compact, surface mount components with high performance.

Analog Devices' HMC327MS8G is a wide band medium power RF amplifier with 17 dB gain, operating from 3-4 GHz. It has a max input power of 16 dBm and operates b/w -40 to 85°C. Ideal for RF & microwave applications requiring surface mount components in plastic/epoxy package.

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.

SGA-6286Z by Sirenza Microdevices is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in the RF & Microwave field.

NARROW BAND HIGH POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4500 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -55 Cel;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Qorvo's QPA9121TR7 is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact PLASTIC/EPOXY package and surface mount feature, it's ideal for RF & Microwave systems requiring high performance in temperatures ranging from -40 to 105°C.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

Broadcom's MGA-82563-TR1 is a GAAS RF amplifier with 12dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications. The component features a plastic/epoxy package body, surface mounting feature, and operates b/w -40°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 412 mA;

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.