Asi Semiconductor - MV1401

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV2107LT1 by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this diode offers precise tuning capabilities for RF circuits.

MV2109RLRP by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it ideal for RF tuning circuits in communication systems.

BB804-3 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA, operates up to 100 °C, and comes in a compact rectangular package with dual terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small form factors.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BB240TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 14, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi); Diode Element Material: SILICON;

BB417-AMMOPAK by NXP Semiconductors is a variable capacitance diode ideal for tuning circuits. It features a max reverse current of 0.1 µA, operates up to 100 °C, and has a min capacitance ratio of 2. This glass-encased, axial diode is perfect for RF applications.

SMV1247-079LF by Skyworks Solutions is a varactor diode with a min quality factor of 1500, hyperabrupt variable capacitance diode classification, and max reverse current of 0.02 uA. It is used in applications requiring small outline package style, such as RF tuning circuits for communication devices.

SMV1255-079LF by Skyworks: Varactor diode with 64pF capacitance, 15V breakdown voltage, and -55 to 125°C operating temp. Ideal for RF applications due to hyperabrupt diode classification and small outline package.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE;

MV104RLRAG by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 100 and a Nominal Capacitance of 39.5 pF. Commonly used in RF applications, this diode has a Max Power Dissipation of 0.28 W and operates at a Min Breakdown Voltage of 32 V.

1N5452 by Onsemi is a Varactor Diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 250 and low reverse current of 0.00000002uA.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LV2209ZL1 by Onsemi is a single varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 25V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 20 V; Minimum Quality Factor: 33; Nominal Diode Capacitance: .9 pF;

LV2205 by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 25 V. It is used in RF applications for frequency tuning due to its variable capacitance property.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;