NXP Semiconductors - BB182,315

  1. Home
  2. NXP Semiconductors - BB182,315
BB182,315 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BB182,315
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;
Datasheet BB182,315 Datasheet
In Stock3,123
NAME DESCRIPTION
Other Names: 934047500315
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 35 V
Sub-Category: Varactors
Surface Mount: YES
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Nominal Diode Capacitance: 52 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,123 - -

Popular Products

Category Top Products

SVC354T by Onsemi

SVC354T

Onsemi

The Onsemi SVC354T is a Varactor Diode with a Min Quality Factor of 200, Breakdown Voltage of 16V, and Capacitance Ratio of 17.5. It is used in RF applications for frequency tuning due to its Variable Capacitance property and small outline package style.
934042250135 by NXP Semiconductors

934042250135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC202SPA by Onsemi

SVC202SPA

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 16 V; Minimum Quality Factor: 190; Nominal Diode Capacitance: 37 pF;
BB249 by NXP Semiconductors

BB249

NXP Semiconductors

BB249 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a reverse test voltage of 28 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.
934055438115 by NXP Semiconductors

934055438115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934057929135 by NXP Semiconductors

934057929135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE;
934057928215 by NXP Semiconductors

934057928215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE;
BB219 by NXP Semiconductors

BB219

NXP Semiconductors

BB219 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.
MA45439-287T by Tyco Electronics M/a-com

MA45439-287T

Tyco Electronics M/a-com

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
934040030115 by NXP Semiconductors

934040030115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX583M by Texas Instruments

MDX583M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 35;
BB172X by NXP Semiconductors

BB172X

NXP Semiconductors

BB172X by NXP Semiconductors is a single, surface-mount varactor diode ideal for very high frequency applications. It features a nominal capacitance of 38.5 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 32 V. Perfect for tuning circuits and RF applications.
BBY42235 by NXP Semiconductors

BBY42235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC353R by Onsemi

SVC353R

Onsemi

The Onsemi SVC353R is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. Ideal for applications requiring variable capacitance diodes in surface mount packages with a min. breakdown voltage of 16 V.
1N4793 by Onsemi

1N4793

Onsemi

1N4793 by Onsemi is a varactor diode with 27pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.005uA and max operating temperature of 150 °C.
SVC276 by Onsemi

SVC276

Onsemi

SVC276 by Onsemi is a Varactor Diode with 76.75pF capacitance, 14V breakdown voltage, and 3.1 min capacitance ratio. Commonly used in RF applications for frequency tuning due to its variable capacitance diode type and dual element configuration. Operating at max temp of 125 °C, it's surface-mountable with a small outline package style.
BB155/T3 by NXP Semiconductors

BB155/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC381-TL-E by Onsemi

SVC381-TL-E

Onsemi

SVC381-TL-E by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and Nominal Capacitance of 427.5 pF. Commonly used in RF applications due to its Variable Capacitance and Breakdown Voltage of 16V, it features a Small Outline package for surface mount assembly at temperatures up to 125 °C.
BB911/A143 by NXP Semiconductors

BB911/A143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MDX645 by Texas Instruments

MDX645

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 20 V; Minimum Quality Factor: 66;