Baneasa S A - 2N5109A

  1. Home
  2. Baneasa S A - 2N5109A
2N5109A by Baneasa S A

Image shown is a representation only.

Manufacturer Baneasa S A
Manufacturer's Part Number 2N5109A
Description RF Small Signal Bipolar Transistors; Surface Mount: NO; JEDEC-95 Code: TO-39; Package Body Material: METAL; Terminal Form: WIRE; Qualification: Not Qualified;
Datasheet 2N5109A Datasheet
NAME DESCRIPTION
Package Body Material: METAL
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
Package Shape: ROUND
Terminal Form: WIRE
JEDEC-95 Code: TO-39
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BFR93AW by Vishay Semiconductors

BFR93AW

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: MATTE TIN;
HFA3102B96 by Intersil

HFA3102B96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1;
HFA3046BZ96 by Intersil

HFA3046BZ96

Intersil

HFA3046BZ96 by Intersil is an NPN RF BJT with 5 elements and 14 terminals. It operates in the ultra-high frequency band up to 8V, with a transition frequency of 8000MHz. Ideal for amplifier applications, it has a max operating temperature of 150°C and is surface mountable.
BFY90 by Baneasa S A

BFY90

Baneasa S A

RF Small Signal Bipolar Transistors; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: WIRE; Package Body Material: METAL; Package Shape: ROUND;
BFR520 by New Jersey Semiconductor Products

BFR520

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 15 V;
MPS5179RLRPG by Onsemi

MPS5179RLRPG

Onsemi

MPS5179RLRPG by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it suitable for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
FMB3946 by Onsemi

FMB3946

Onsemi

FMB3946 by Onsemi is a RF BJT transistor with NPN and PNP channels. It has 2 elements, 6 terminals, hFE of 30, max temp of 150°C, Vce of 40V, and fT of 200MHz. Ideal for switching applications due to its fast ton (38ns) and toff (190ns) times in a small outline package.
BFP720H6327XTSA1 by Infineon Technologies

BFP720H6327XTSA1

Infineon Technologies

BFP720H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, max. collector-emitter voltage of 4V, and fT of 45GHz. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier circuits.
BFP196WH6327XTSA1 by Infineon Technologies

BFP196WH6327XTSA1

Infineon Technologies

BFP196WH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 7500 MHz, and max collector current of 0.15A. This small outline package transistor is designed for amplifier circuits in automotive electronics meeting AEC-Q101 standards.
LM3046MX/NOPB by National Semiconductor

LM3046MX/NOPB

National Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
MPS3563RL1 by Onsemi

MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.
BF224RLRM by Onsemi

BF224RLRM

Onsemi

BF224RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and max operating temp of 150 °C. It operates in the very high frequency band at 850MHz, making it ideal for applications requiring high-speed signal amplification in electronic circuits.
BFR520T,115 by NXP Semiconductors

BFR520T,115

NXP Semiconductors

BFR520T,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier transistor that operates in the L Band frequency range up to 9000 MHz. With a max power dissipation of 0.3 W and a max operating temperature of 150°C, it is suitable for various applications requiring high-frequency amplification.
START450TR by STMicroelectronics

START450TR

STMicroelectronics

START450TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.45 W, operates up to 150 °C, and supports frequencies up to 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
SS9018D by Onsemi

SS9018D

Onsemi

SS9018D by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 28, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
LPT16ED by Skyworks Solutions

LPT16ED

Skyworks Solutions

The Skyworks Solutions LPT16ED is an N-CHANNEL RF BJT with a SINGLE configuration for AMPLIFIER applications. It operates in KU BAND, has 4 terminals, and can handle up to 0.25 W power dissipation. With SILICON GERMANIUM material, it offers a max collector-emitter voltage of 4 V and a max operating temperature of 150 °C.
SD1219-5 by STMicroelectronics

SD1219-5

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
BF776H6327XTSA1 by Infineon Technologies

BF776H6327XTSA1

Infineon Technologies

Infineon's BF776H6327XTSA1 is a NPN BJT transistor for ultra-high frequency amplification. With 4 terminals, it operates at max 150°C and has a fT of 46GHz. Its plastic package with gull wing terminals makes it suitable for surface mount applications.
2N2907 by Solid State Devices

2N2907

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
SMA5101 by Onsemi

SMA5101

Onsemi

SMA5101 by Onsemi is an NPN RF BJT with 4 elements and 6 terminals. It operates in KU band, with max power dissipation of 0.28W and max collector-emitter voltage of 6V. Ideal for high-frequency applications requiring small outline packages and flat terminal forms.