Broadcom - 295L875

  1. Home
  2. Broadcom - 295L875
295L875 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295L875
Description Laser Diodes;
Datasheet 295L875 Datasheet
In Stock282
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
282 - -

Popular Products

Category Top Products

TOLD323BAB by Toshiba

TOLD323BAB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: 0 Cel;
SDL4030-001 by Onsemi

SDL4030-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 65 Cel;
NX8570SC984D-BA by Renesas Electronics

NX8570SC984D-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1598; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V;
NX8570SC997-BA-AZ by Renesas Electronics

NX8570SC997-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1599; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
SFH484501 by Infineon Technologies

SFH484501

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: 11 A; Nominal Output Power: 5000 W; Minimum Operating Temperature: 5 Cel; Maximum Operating Temperature: 60 Cel;
SDL5033-001 by Onsemi

SDL5033-001

Onsemi

SDL5033-001 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8567SA449-BC by Renesas Electronics

NX8567SA449-BC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1544; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
SDL4034 by Onsemi

SDL4034

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 780; Semiconductor Material: GaAlAs;
SDL8032-201 by Onsemi

SDL8032-201

Onsemi

SDL8032-201 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications like optical sensors and medical devices.
NX8571SA318-CA by Renesas Electronics

NX8571SA318-CA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .01 A; Peak Wavelength (nm): 1532;
DL-3147-185 by Onsemi

DL-3147-185

Onsemi

DL-3147-185 by Onsemi is a Laser Diode with 0.05A max forward current, emitting at 650nm peak wavelength. Ideal for applications requiring laser diodes, it operates b/w -10 °C to 80°C and has a max forward voltage of 2.6V.
NX8571SC650-BA by Renesas Electronics

NX8571SC650-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1565; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V;
NX8570SA517-CA by Renesas Electronics

NX8570SA517-CA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1552; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
SDL8032-101 by Onsemi

SDL8032-101

Onsemi

SDL8032-101 by Onsemi is an 850nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
NX8570SC634D-BA-AZ by Renesas Electronics

NX8570SC634D-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1563; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel;
NX8571SC610-BA-A by Renesas Electronics

NX8571SC610-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1561; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
TOLD9230(F) by Toshiba

TOLD9230(F)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 670; Semiconductor Material: GaAlInP; Maximum Operating Temperature: 50 Cel;
NX8570SC687-BA by Renesas Electronics

NX8570SC687-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1569; Maximum Forward Current: .3 A;
TOLD135 by Toshiba

TOLD135

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Forward Current: .115 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
CQF23/D43 by NXP Semiconductors

CQF23/D43

NXP Semiconductors

CQF23/D43 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.