Broadcom - 5082-0013

SMMBD330T1G by Onsemi is a Schottky mixer diode with a max forward voltage of 0.45V and max output current of 0.2A. It operates at temperatures up to 125 °C, making it suitable for microwave applications requiring high-speed signal detection and mixing capabilities.

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE;

BAR28-B2 by STMicroelectronics is a single Schottky mixer diode with a max operating temperature of 200 °C and frequency band from VHF to UHF. With a diode capacitance of 2 pF, it is ideal for applications requiring very high frequency signal mixing in microwave circuits. The package shape is round with an isolated case connection, making it suitable for use in various RF and microwave systems.

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 5.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

The Onsemi MBD101 is a single microwave mixer diode with Schottky technology. It operates in the ultra high frequency band, with a max diode capacitance of 1 pF. This cylindrical package has a max power dissipation of 0.28 W and is ideal for applications requiring high frequency mixing and detection.

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 7.5 dB; Diode Element Material: SILICON;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

Broadcom's HSMS-2860-TR1G is a Schottky mixer diode with a frequency range of 0.915 GHz to 5.8 GHz, ideal for C band applications. It features a small outline package with nickel palladium gold finish and can operate in temperatures ranging from -65°C to 150°C. The diode has a max power dissipation of 0.25 W and low diode capacitance of 0.35 pF, making it suitable for microwave mixing and detection tasks in various electronic systems.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT17-04E6327 by Infineon Technologies is a Schottky mixer diode with 2 elements, 0.75 pF capacitance, and 0.35 V forward voltage. It operates in the very high frequency to ultra high frequency band for applications like microwave mixing and detection. This small outline package has a max power dissipation of 0.15 W and can withstand temperatures up to 150°C.

MIXER DIODE; Diode Element Material: SILICON; Technology: SCHOTTKY;

TE Connectivity's MA4E2054B1-287T is a Schottky mixer diode with 2 elements, suitable for X band applications. It has low barrier Schottky technology, 0.3 pF diode capacitance, and can handle 0.075 W pulsed input power.

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Noise Figure: 5.5 dB; Maximum Operating Temperature: 150 Cel;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi MBD701 is a single Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It has a max power dissipation of 0.28 W and operates at temperatures up to 125 °C. This cylindrical diode in plastic/epoxy package is ideal for microwave mixing and detection circuits.