Broadcom - A1754W38WWSC

  1. Home
  2. Broadcom - A1754W38WWSC
A1754W38WWSC by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number A1754W38WWSC
Description Laser Diodes;
Datasheet A1754W38WWSC Datasheet
In Stock300
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
300 - -

Popular Products

Category Top Products

NX8563LF997-BA-A by Renesas Electronics

NX8563LF997-BA-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1599; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A;
NX8566LE836-BC by Renesas Electronics

NX8566LE836-BC

Renesas Electronics

Laser Diodes;
NX8567SA287-CC by Renesas Electronics

NX8567SA287-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1528; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
NX7338BF-AA-AZ by Renesas Electronics

NX7338BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s;
DL-3038-013 by Onsemi

DL-3038-013

Onsemi

DL-3038-013 by Onsemi is a LASER DIODE with peak wavelength of 635nm, max forward current of 0.06A, and max forward voltage of 2.5V. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications in various industries.
SPLBS94 by Infineon Technologies

SPLBS94

Infineon Technologies

LASER DIODE; Semiconductor Material: InGaAs/GaAs; Spectral Bandwidth: 4 m; Peak Wavelength (nm): 940;
TOLD163 by Toshiba

TOLD163

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
NX8570SA654-BA by Renesas Electronics

NX8570SA654-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1565; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
SDL3140-001 by Onsemi

SDL3140-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
NX8563LA397-CD-A by Renesas Electronics

NX8563LA397-CD-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1540; Maximum Forward Current: .3 A; Maximum Response Time: .00000000012 s;
NX8570SC473D-BA-AZ by Renesas Electronics

NX8570SC473D-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1547; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
NX8570SC824-BA-AZ by Renesas Electronics

NX8570SC824-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
SDL6032-001 by Onsemi

SDL6032-001

Onsemi

SDL6032-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
STH91005G by Infineon Technologies

STH91005G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 70 Cel;
DL-LS1027 by Onsemi

DL-LS1027

Onsemi

DL-LS1027 by Onsemi is a 660nm LASER DIODE with max. forward current of 0.13A and voltage of 3.5V. It operates b/w -10 °C to 70°C, suitable for THROUGH HOLE MOUNT applications in various industries like telecommunications and medical devices.
NX8571SA525-CA by Renesas Electronics

NX8571SA525-CA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1553; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .01 A; Maximum Operating Temperature: 70 Cel;
SDL4032 by Onsemi

SDL4032

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; JESD-609 Code: e0; Peak Wavelength (nm): 830;
NX8570SC334-BA-AZ by Renesas Electronics

NX8570SC334-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel;
CQF25C/D41 by NXP Semiconductors

CQF25C/D41

NXP Semiconductors

CQF25C/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
OPV332 by Optek Technology

OPV332

Optek Technology

LASER DIODE; No. of Functions: 1; Configuration: SINGLE; Maximum Threshold Current: 3 mA; Shape: ROUND; Peak Wavelength (nm): 830;