Broadcom - A1754W39WWSC

  1. Home
  2. Broadcom - A1754W39WWSC
A1754W39WWSC by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number A1754W39WWSC
Description Laser Diodes;
Datasheet A1754W39WWSC Datasheet
In Stock261
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
261 - -

Popular Products

Category Top Products

Q65112A6166 by Osram Opto Semiconductors

Q65112A6166

Osram Opto Semiconductors

The Osram Opto Semiconductors Q65112A6166 is a 2.3mm SINGLE laser diode with a peak wavelength of 905nm. It operates b/w -40°C to 105°C, making it suitable for various applications requiring a RECTANGULAR shape and GOLD terminal finish.
NX8571SC845-BA-AZ by Renesas Electronics

NX8571SC845-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1584; Maximum Forward Voltage: 2.5 V;
DL-LS1060 by Onsemi

DL-LS1060

Onsemi

DL-LS1060 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and 3V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 70°C, featuring through hole mounting.
TOLD321BAC by Toshiba

TOLD321BAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s;
NX8562LB606 by Renesas Electronics

NX8562LB606

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.5 V;
CQF25C/D41 by NXP Semiconductors

CQF25C/D41

NXP Semiconductors

CQF25C/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
NX8571SC533-BA by Renesas Electronics

NX8571SC533-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1553;
SDL3030 by Onsemi

SDL3030

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 790; Semiconductor Material: GaAlAs;
TOLD322BCA by Toshiba

TOLD322BCA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 80 Cel;
NX8563LAS517-CD-A by Renesas Electronics

NX8563LAS517-CD-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000012 s; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1552;
DL-3148-021 by Onsemi

DL-3148-021

Onsemi

DL-3148-021 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
TOLD136 by Toshiba

TOLD136

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .11 A;
NX8571SC757-BA-AZ by Renesas Electronics

NX8571SC757-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1576; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
NX8563LF6014-BA-AZ by Renesas Electronics

NX8563LF6014-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1601; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP;
NX8567SA342-BC by Renesas Electronics

NX8567SA342-BC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1534; Maximum Forward Current: .15 A;
TOLD320BAA by Toshiba

TOLD320BAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s;
STH91005A by Infineon Technologies

STH91005A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .12 A;
DL-5146-351 by Onsemi

DL-5146-351

Onsemi

DL-5146-351 by Onsemi is a LASER DIODE with 405nm Peak Wavelength, 0.11A Max Forward Current, and 6.5V Max Forward Voltage. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in various industries.
TOLD124R by Toshiba

TOLD124R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
NX8566LE295-CC by Renesas Electronics

NX8566LE295-CC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V;