Broadcom - A1754W49WWFC

  1. Home
  2. Broadcom - A1754W49WWFC
A1754W49WWFC by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number A1754W49WWFC
Description Laser Diodes;
Datasheet A1754W49WWFC Datasheet
In Stock497
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
497 - -

Popular Products

Category Top Products

TOLD321BCC by Toshiba

TOLD321BCC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -30 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel;
NX8563LB589 by Renesas Electronics

NX8563LB589

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1558; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs;
NX8570SA326-CA by Renesas Electronics

NX8570SA326-CA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1533; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V;
NX8560SJ597-BC by Renesas Electronics

NX8560SJ597-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1560; Minimum Operating Temperature: -5 Cel;
NX8565LE853-CC by Renesas Electronics

NX8565LE853-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Semiconductor Material: GaAs; Maximum Forward Voltage: 2 V; Maximum Forward Current: .1 A;
DL-4147-062 by Onsemi

DL-4147-062

Onsemi

DL-4147-062 by Onsemi is a LASER DIODE with 0.07A max forward current, emitting at 650nm peak wavelength. It operates b/w -10 °C to 70°C, with a max forward voltage of 2.6V. Ideal for applications requiring precise optical emission in through-hole mounting configurations.
DL-3147-285 by Onsemi

DL-3147-285

Onsemi

DL-3147-285 by Onsemi is a LASER DIODE with Peak Wavelength of 650nm, Max Forward Current of 0.05A, and Max Forward Voltage of 2.6V. It operates b/w -10 °C to 80°C and is mounted using THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.
TOLD320ACA by Toshiba

TOLD320ACA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V;
DL-6140-201 by Onsemi

DL-6140-201

Onsemi

DL-6140-201 by Onsemi is a Laser Diode with 785nm Peak Wavelength, 0.12A Max Forward Current, and -10 to 50 °C Operating Temp. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
NX8562LF745-BA-A by Renesas Electronics

NX8562LF745-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1574;
STL51705G by Infineon Technologies

STL51705G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V; Spectral Bandwidth: 5 m; Maximum Forward Current: .12 A;
NX8570SC6006-BA-AZ by Renesas Electronics

NX8570SC6006-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1600; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
NX7563JB-BC-AZ by Renesas Electronics

NX7563JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000002 s; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550; Spectral Bandwidth: 6 m;
SDL8033-101 by Onsemi

SDL8033-101

Onsemi

SDL8033-101 by Onsemi is an 870nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
DL-3144-008S by Onsemi

DL-3144-008S

Onsemi

DL-3144-008S by Onsemi is a GaAs LASER DIODE with Peak Wavelength of 785nm. It has Max Forward Current of 0.055A and operates b/w -10 to 60 °C. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
STL51705A by Infineon Technologies

STL51705A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Minimum Operating Temperature: -40 Cel; Spectral Bandwidth: 5 m; Maximum Forward Voltage: 1.5 V;
NX8563LAS493-CC-A by Renesas Electronics

NX8563LAS493-CC-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1549; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
NX8570SA311-BA by Renesas Electronics

NX8570SA311-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1531; Maximum Forward Voltage: 2.5 V;
TOLD320BBA by Toshiba

TOLD320BBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310;
NX8567SAM573-CC by Renesas Electronics

NX8567SAM573-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1557; Maximum Response Time: .000000000125 s;