Broadcom - AFT-2033-50F

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.

ADL5610ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with a gain of 13.2 dB. It operates in the frequency range of 30 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.

RF2172TR7 by Rf Micro Devices is a GAAS technology RF amplifier with 16 terminals, operating at 3.6V. It is a narrow band medium power device for surface mount applications in RF and microwave systems.

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

Agilent Technologies' MGA-72543BLK is a wide band low power RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, making it ideal for RF and microwave applications requiring high frequency amplification in a compact form factor.

Mitsubishi Electric's M67799HA is a hybrid module with 450-470 MHz frequency range, 50 ohm impedance, and 14.77 dBm CW input power. Ideal for narrowband high-power RF applications, it operates b/w -30 to 100°C with VSWR of up to 20 in plastic/epoxy package.

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;

Qorvo's RDA1005L is a wide band low power RF amplifier with 17.5 dB gain, operating from 50 MHz to 4000 MHz. It features a plastic/epoxy package, surface mounting, and requires a 5V power supply. Ideal for applications requiring high frequency amplification in compact designs.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Minimum Operating Frequency: 10 MHz; Additional Features: I/P POWER-MAX (PEAK)=27DBM; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -55 Cel; Characteristic Impedance: 50 ohm;

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.

WIDE BAND HIGH POWER; Minimum Operating Frequency: 5600 MHz; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Maximum Input Power (CW): 25 dBm; Maximum Operating Frequency: 7100 MHz;

WIDE BAND MEDIUM POWER;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;

MAX2232EEE by Maxim Integrated is a RF amplifier with 23.9 dB gain, operating frequency range of 800-1000 MHz, and VSWR of 1.5. It is ideal for narrowband medium power applications requiring a max input power of 10 dBm in plastic/epoxy package suitable for surface mounting.

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.