M/a-com Technology Solutions - MAMX-011009-TR1000

XB1007-QT-0G00 by M/a-com is a GAAS technology RF amplifier with 23 dB gain, operating from 4-11 GHz. It has a max input power of 20 dBm and operates b/w -55 to 85°C. Ideal for wideband medium power applications requiring surface mounting features.

WIDE BAND HIGH POWER;

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

TGA2526 by Qorvo is a GAAS wide band low power RF amplifier with a gain of 17.5 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 22 dBm. This component is commonly used in RF and microwave applications.

NARROW BAND HIGH POWER;

BGB741L7ESD-E6327 by Infineon Technologies is a RF & Microwave Amplifier with 3V power supply, 7 terminals, and gold finish. It operates on bipolar technology with a max current of 7.2mA. Ideal for surface mount applications in various electronic devices.

NARROW BAND HIGH POWER;

WIDE BAND MEDIUM POWER; JESD-609 Code: e3/e4; Maximum Operating Frequency: 50000 MHz; Gain: 8 dB; Construction: COMPONENT; Maximum Input Power (CW): 18 dBm;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.

ADL5535ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 14.9 dB gain, operating from 20 MHz to 1000 MHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

ERA-2SM by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, operating from 0 to 6000 MHz. It has a max input power of 15 dBm and VSWR of 1.7, suitable for RF & microwave applications requiring surface mount construction in the temperature range of -45 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Power Supplies (V): +-15;

NARROW BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Maximum Operating Frequency: 8000 MHz;

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;