Broadcom - AFT-6261-2RF

Analog Devices' HMC6981LS6TR is a GaAs RF amplifier with 16 terminals, operating at 6V. With wideband high power capability, it has a ceramic package and can withstand temperatures from -40°C to 85°C. Ideal for surface mount applications in RF and microwave systems.

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.

HELA-10D+ by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, operating from 8 MHz to 300 MHz. It offers a max input power of 20 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring high performance amplification in a compact form factor.

The Mini-circuits GALI-6 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for surface mount applications in RF & microwave systems, it offers VSWR of 2 and operates b/w -45°C to +85°C.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

Broadcom's MGA-23003-BLKG is a RF & Microwave Amplifier with 32 dB Gain, operating b/w 3300-3800 MHz. It has a Max Input Power of 15 dBm and operates on a 3.3V power supply. Ideal for narrowband medium power applications due to its GaAs technology and surface mounting feature.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.

HMC8413LP2FETR by Analog Devices is a wide band medium power RF amplifier with 17 dB gain, suitable for frequencies ranging from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, making it ideal for RF and microwave applications requiring high performance amplification in the temperature range of -40°C to 85°C.

Qorvo's SBB2089ZSR is a wide band low power RF amplifier with 18.5 dB gain, suitable for frequencies ranging from 50 MHz to 850 MHz. It operates at temperatures b/w -40°C to 85°C and can handle a max input power of 24 dBm. This component is ideal for applications requiring high performance in RF and microwave systems.

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; JESD-609 Code: e4; Gain: 10 dB; Maximum Operating Frequency: 20000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 3000 MHz;

TGM2635-CP by Qorvo is a wide band high power RF amplifier with 26 dB gain, operating from 7900 MHz to 11000 MHz. It has a max input power of 33 dBm and VSWR of 3, suitable for surface mount applications in RF & microwave systems. Operating temperature ranges from -40°C to 85°C.

Analog Devices' HMC478MP86ETR is a wide band low power RF amplifier with 5V power supply, operating from -40°C to 85°C. This bipolar technology device has 4 terminals and surface mounting feature, making it ideal for RF & microwave applications requiring high performance in a compact package.

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.

WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;