Broadcom - AFT-8464-4RF

  1. Home
  2. Broadcom - AFT-8464-4RF
AFT-8464-4RF by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AFT-8464-4RF
Description WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Construction: MODULE; Minimum Operating Frequency: 4000 MHz; Maximum Operating Frequency: 8000 MHz;
Datasheet AFT-8464-4RF Datasheet
In Stock340
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Minimum Operating Frequency: 4000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 8000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
340 - -

Popular Products

Category Top Products

HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
HMC816LP4ETR by Hittite Microwave

HMC816LP4ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
PHA-102+ by Mini-circuits

PHA-102+

Mini-circuits

WIDE BAND LOW POWER;
HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.
HMC608LC4 by Analog Devices

HMC608LC4

Analog Devices

HMC608LC4 by Analog Devices is a wide band medium power RF amplifier with 27 dB gain. It operates b/w 9500-11500 MHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.
ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.
TQP7M9102-PCB2140 by Qorvo

TQP7M9102-PCB2140

Qorvo

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;
A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;
HMC943APM5ETR by Analog Devices

HMC943APM5ETR

Analog Devices

HMC943APM5ETR by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-34 GHz. It can handle up to 20 dBm CW input power and has a max VSWR of 7. Ideal for applications requiring high frequency amplification in RF & microwave systems.
ECG008B-G by Qorvo

ECG008B-G

Qorvo

Qorvo's ECG008B-G is a wide band medium power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 15 dBm CW input power. Ideal for applications requiring high performance in RF & microwave systems.
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.
HMC1082LP4E by Hittite Microwave

HMC1082LP4E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;
SPF5043ZSQ by Rf Micro Devices

SPF5043ZSQ

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11.4 dB;
HMC506LP4E by Hittite Microwave

HMC506LP4E

Hittite Microwave

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;
AG303-86G by Wj Communications

AG303-86G

Wj Communications

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;
QPA1019 by Qorvo

QPA1019

Qorvo

Qorvo's QPA1019 is a wide band high power RF amplifier with 30 dB gain, handling up to 28 dBm CW input power. Operating from 4.5 GHz to 7 GHz, it's ideal for applications requiring robust amplification in RF & microwave systems. With gold terminal finish and operating temperatures from -40°C to 85°C, it ensures reliable performance in various environments.
XP1050-QJ-0G0T by M/a-com Technology Solutions

XP1050-QJ-0G0T

M/a-com Technology Solutions

XP1050-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain. It operates b/w 7-9 GHz, handles up to 25 dBm CW input power, and can withstand temperatures from -40 to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
HMC8325 by Analog Devices

HMC8325

Analog Devices

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
XP1050-QJ-0G0T by Mimix Broadband

XP1050-QJ-0G0T

Mimix Broadband

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 25 dBm; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;