Broadcom - AFT186N50U21

  1. Home
  2. Broadcom - AFT186N50U21
AFT186N50U21 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AFT186N50U21
Description WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 100 Cel; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 20 dBm;
Datasheet AFT186N50U21 Datasheet
In Stock99
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Maximum Input Power (CW): 20 dBm
Minimum Operating Frequency: 6000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 18000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -54 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
99 - -

Popular Products

Category Top Products

MAAM-011109-TR1000 by M/a-com Technology Solutions

MAAM-011109-TR1000

M/a-com Technology Solutions

MAAM-011109-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 8 dB gain, operating from 10 MHz to 40 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -40°C to +85°C. Ideal for RF and microwave applications requiring high performance in a compact form factor.
NPA1006A by M/a-com Technology Solutions

NPA1006A

M/a-com Technology Solutions

NPA1006A by M/a-com Technology Solutions is a wide band high power RF amplifier with 12.5 dB gain, operating from 20 MHz to 1000 MHz. It features a max VSWR of 15 and operates on a 28V power supply, suitable for surface mount applications in RF & microwave systems.
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.
QPA1027 by Qorvo

QPA1027

Qorvo

Qorvo's QPA1027 is a GAN technology RF amplifier with 31dB gain, operating from 2800-3500MHz. It has a max input power of 29dBm and VSWR of 3, suitable for narrowband high-power applications. With surface mount feature and 50 ohm impedance, it is ideal for RF & microwave systems requiring high performance in plastic/epoxy package.
SKY65111-348LF by Skyworks Solutions

SKY65111-348LF

Skyworks Solutions

SKY65111-348LF by Skyworks Solutions is a narrow band medium power RF amplifier with 39.5 dB gain, operating from 600 MHz to 1100 MHz. It has a max input power of 10 dBm and VSWR of 8, suitable for applications requiring high-frequency amplification in the RF & Microwave domain. The component is designed for surface mount installation and operates within a temperature range of -40°C to 85°C.
MMG3002NT1 by Motorola

MMG3002NT1

Motorola

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;
HMC794LP3E by Analog Devices

HMC794LP3E

Analog Devices

HMC794LP3E by Analog Devices is a wide band low power RF amplifier with a max operating frequency of 2 GHz and characteristic impedance of 50 ohm. It can handle up to 13 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperature range from -40°C to 85°C.
BGU8009 by NXP Semiconductors

BGU8009

NXP Semiconductors

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.
MAAM-011101-TR1000 by M/a-com Technology Solutions

MAAM-011101-TR1000

M/a-com Technology Solutions

MAAM-011101-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 17 dB gain, operating from 4 to 20 GHz. It can handle up to 23 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification.
AD8350ARMZ15 by Analog Devices

AD8350ARMZ15

Analog Devices

AD8350ARMZ15 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain, operating up to 1000 MHz. It can handle max input power of 8 dBm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
HMC374SC70E by Hittite Microwave

HMC374SC70E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
MGA-86576-TR1G by Agilent Technologies

MGA-86576-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;
HMC797LP5ETR by Hittite Microwave

HMC797LP5ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 10;
AMMP-6220 by Agilent Technologies

AMMP-6220

Agilent Technologies

WIDE BAND LOW POWER; Maximum Operating Frequency: 20000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 6000 MHz; Construction: COMPONENT; Gain: 18 dB;
LT5524EFE#PBF by Linear Technology

LT5524EFE#PBF

Linear Technology

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;
TQP7M9103 by Triquint Semiconductor

TQP7M9103

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;
RF5110GSR by Rf Micro Devices

RF5110GSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;
HMC902LP3E by Hittite Microwave

HMC902LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
ERA-2SM by Mini-circuits

ERA-2SM

Mini-circuits

ERA-2SM by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, operating from 0 to 6000 MHz. It has a max input power of 15 dBm and VSWR of 1.7, suitable for RF & microwave applications requiring surface mount construction in the temperature range of -45 to 85°C.