Broadcom - AT-38086-BLK

  1. Home
  2. Broadcom - AT-38086-BLK
AT-38086-BLK by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AT-38086-BLK
Description NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
Datasheet AT-38086-BLK Datasheet
In Stock171
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 9.5 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-PRDB-G4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: GULL WING
Additional Features: HIGH RELIABILITY
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
171 - -

Popular Products

Category Top Products

KST10MTF by Onsemi

KST10MTF

Onsemi

KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.
934063143215 by NXP Semiconductors

934063143215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Package Style (Meter): SMALL OUTLINE;
BFR92A by Lite-on Semiconductor

BFR92A

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: AMPLIFIER;
2N3114 by Texas Instruments

2N3114

Texas Instruments

2N3114 by Texas Instruments is a NPN BJT transistor for RF applications. With max. power dissipation of 0.8W, it operates in the very high frequency band up to 40MHz. Ideal for amplifier circuits, it has a max. collector-emitter voltage of 150V and max. collector current of 0.2A.
BF959RLRE by Onsemi

BF959RLRE

Onsemi

BF959RLRE by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operating temp up to 150 °C makes it suitable for various through-hole configurations.
934067702235 by NXP Semiconductors

934067702235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
NSVF3007SG3T1G by Onsemi

NSVF3007SG3T1G

Onsemi

NSVF3007SG3T1G by Onsemi is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 8000MHz. Suitable for surface mount design with a max operating temp of 150 °C.
BF224RL by Onsemi

BF224RL

Onsemi

BF224RL by Onsemi is a NPN RF BJT with 30V VCEO, 850MHz fT, and 0.05A IC. Ideal for very high frequency applications in electronics due to its single configuration and through-hole terminal form. Operating at up to 150 °C, it is commonly used in RF amplifiers and oscillators.
TIS125 by Texas Instruments

TIS125

Texas Instruments

TIS125 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.25W, hFE of 30, and fT of 450MHz. It is used in RF applications due to its very high frequency band capability, operating at up to 150°C with a VCE max of 30V.
2SC5490A-TL-H by Onsemi

2SC5490A-TL-H

Onsemi

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;
BFP405H6327XTSA1 by Infineon Technologies

BFP405H6327XTSA1

Infineon Technologies

BFP405H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.025A IC, and 25000MHz fT. Ideal for L Band applications, it features a small outline package with Gull Wing terminals for surface mount amplification needs.
15GN03CA-TB-E by Onsemi

15GN03CA-TB-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
BFT92E6327 by Infineon Technologies

BFT92E6327

Infineon Technologies

BFT92E6327 by Infineon Technologies is a PNP RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 15 and a nominal transition frequency of 5000 MHz, making it suitable for amplifier applications in the L Band. This surface-mount transistor features a small outline package with gull wing terminals and can handle up to 0.025 A collector current.
2N3553 by STMicroelectronics

2N3553

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): 1 A;
HFA3102BZ by Renesas Electronics

HFA3102BZ

Renesas Electronics

The Renesas Electronics HFA3102BZ is an NPN RF BJT transistor with a max fT of 10GHz. It has 14 terminals, operates in the UHF band, and is used for amplifier applications. The package is small outline, surface mountable, with a max operating temp of 85°C.
MRF911 by Motorola

MRF911

Motorola

MRF911 by Motorola is a NPN RF BJT transistor for switching applications. With a max. collector-emitter voltage of 12V, it operates in L band with fT of 5000 MHz. This surface-mount device has 4 terminals and a min hFE of 30, making it suitable for high-frequency signal amplification.
2N3866 by Space Power Electronics

2N3866

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
PBR951,215 by NXP Semiconductors

PBR951,215

NXP Semiconductors

NXP Semiconductors PBR951,215 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 8 GHz and has a max power dissipation of 0.365 W. Ideal for amplifier applications, it can handle a max collector-emitter voltage of 10V at an operating temp of 175°C.
MPSH81RL1 by Onsemi

MPSH81RL1

Onsemi

MPSH81RL1 by Onsemi is a PNP RF BJT transistor with 3 terminals. It has a max collector-emitter voltage of 20V, fT of 600MHz, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
MSC1000MP by STMicroelectronics

MSC1000MP

STMicroelectronics

STMicroelectronics' MSC1000MP is an NPN BJT transistor for amplifier applications. With a max operating temp of 200 °C, it has a hFE of 15 and VCE of 20V. This surface-mount transistor in round package style with 4 terminals is ideal for L Band frequency applications.