Infineon Technologies - BFR106E6327HTSA1

  1. Home
  2. Infineon Technologies - BFR106E6327HTSA1
BFR106E6327HTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFR106E6327HTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .1 A;
Datasheet BFR106E6327HTSA1 Datasheet
In Stock63,639
NAME DESCRIPTION
Nominal Transition Frequency (fT): 5000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: BFR 106 E6327CT
BFR 106 E6327
BFR 106 E6327-ND
BFR 106 E6327TR-ND
BFR106E6327XT
BFR 106 E6327DKR
BFR106E6327HTSA1CT
BFR 106 E6327DKR-ND
BFR 106 E6327CT-ND
BFR106E6327HTSA1TR
SP000011044
BFR106E6327HTSA1DKR
BFR106E6327
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 70
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Maximum Collector-Base Capacitance: 1.5 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
63,639 - -

Popular Products

Category Top Products

934064611115 by NXP Semiconductors

934064611115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .06 A; Additional Features: LOW NOISE;
MPS6507RLRE by Onsemi

MPS6507RLRE

Onsemi

MPS6507RLRE by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and max operating temp of 150 °C. Ideal for amplifier applications, it has a max collector current of 0.05A and transition frequency of 800MHz, housed in a cylindrical package with through-hole terminals.
NESG260234-T1 by Nec Electronics

NESG260234-T1

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
JANTX2N3866A by Semicoa

JANTX2N3866A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
MPSH81 by Onsemi

MPSH81

Onsemi

The Onsemi MPSH81 is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low capacitance of 0.85pF. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.
A5T3571 by Texas Instruments

A5T3571

Texas Instruments

A5T3571 by Texas Instruments is an NPN BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 20 and a nominal transition frequency of 1200 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. The package style is cylindrical with a plastic/epoxy body material and wire terminals.
55GN01FA by Onsemi

55GN01FA

Onsemi

55GN01FA by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 0.25W, hFE of 100, and fT of 5500MHz. The package is small outline plastic/epoxy with dual terminal position and can operate up to 150 °C.
2N5109 by Motorola

2N5109

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; Terminal Form: WIRE;
MRF237 by Motorola

MRF237

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
MPS3640 by Central Semiconductor

MPS3640

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
JANS2N2907AUBC by Vpt Components

JANS2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Elements: 1; Reference Standard: MIL-19500;
BFR520T by NXP Semiconductors

BFR520T

NXP Semiconductors

The NXP Semiconductors BFR520T is a RF Small Signal BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the L Band frequency range up to 9000 MHz, with a max power dissipation of 0.3W and a min DC current gain of 60.
934055191115 by NXP Semiconductors

934055191115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Collector Current (IC): .025 A; Moisture Sensitivity Level (MSL): 1;
934063147215 by NXP Semiconductors

934063147215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 10 V;
MRF237 by Asi Semiconductor

MRF237

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-MBCY-W3;
LA733Q by Onsemi

LA733Q

Onsemi

LA733Q by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 1.5W, hFE of 135, and fT of 100MHz. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
BFR380FH6327XTSA1 by Infineon Technologies

BFR380FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BFR92A by STMicroelectronics

BFR92A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
MRF559 by Microsemi

MRF559

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .15 A; Terminal Finish: TIN LEAD;
START420 by STMicroelectronics

START420

STMicroelectronics

START420 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, operates in the C band, and comes in a compact rectangular package with gull-wing terminals. Ideal for surface mount designs, it supports efficient signal amplification.