Microsemi - JANS2N3866AUB

  1. Home
  2. Microsemi - JANS2N3866AUB
JANS2N3866AUB by Microsemi

Image shown is a representation only.

Manufacturer Microsemi
Manufacturer's Part Number JANS2N3866AUB
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Package Shape: RECTANGULAR;
Datasheet JANS2N3866AUB Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .4 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-CDSO-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance: 3.5 pF
Reference Standard: MIL-19500/398
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2SC5226A-4-TL-E by Sanyo Semiconductor

2SC5226A-4-TL-E

Sanyo Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .07 A; Package Body Material: PLASTIC/EPOXY;
HFA3127RZ by Integrated Device Technology

HFA3127RZ

Integrated Device Technology

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;
HFA3102BZ96 by Intersil

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;
BFU910FX by NXP Semiconductors

BFU910FX

NXP Semiconductors

NXP Semiconductors' BFU910FX is a NPN RF BJT transistor with 4 terminals, suitable for K Band applications. With a max fT of 90 GHz and IC of 0.015 A, it's ideal for amplifier circuits requiring high-frequency performance in small outline packages. The device features silicon germanium element material and can withstand peak reflow temp of 260°C per IEC-60134 standard.
LM3146M by National Semiconductor

LM3146M

National Semiconductor

LM3146M by National Semiconductor is an NPN BJT transistor with a max operating temperature of 85°C and a fT of 500 MHz. It has 14 terminals, can handle up to 30V, and is used in amplifier applications for the very high-frequency band.
2N3553 by STMicroelectronics

2N3553

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): 1 A;
BFR93AR by Vishay Telefunken

BFR93AR

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BFR193E6327HTSA1 by Infineon Technologies

BFR193E6327HTSA1

Infineon Technologies

BFR193E6327HTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 70 and operates in the ultra-high frequency band up to 8000 MHz. This transistor is commonly used as an amplifier in applications requiring high-frequency signal amplification.
BFP182WH6327XTSA1 by Infineon Technologies

BFP182WH6327XTSA1

Infineon Technologies

BFP182WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.035A. Ideal for amplifier circuits due to its high transition frequency and low collector-base capacitance.
2N2368 by STMicroelectronics

2N2368

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;
HFA3134IHZ96 by Intersil

HFA3134IHZ96

Intersil

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .026 A; Minimum DC Current Gain (hFE): 48;
BFP740ESDH6327XTSA1 by Infineon Technologies

BFP740ESDH6327XTSA1

Infineon Technologies

BFP740ESDH6327XTSA1 by Infineon is an NPN RF BJT with 14.5 dB power gain, ideal for amplifier applications in the C band. It features a max operating temperature of 150°C, fT of 45 GHz, and a collector-emitter voltage of 4.2V. This transistor has a small outline package with gull wing terminals and can handle up to 0.16W power dissipation.
KSC1674O by Onsemi

KSC1674O

Onsemi

KSC1674O by Onsemi is an NPN RF BJT with a max VCEsat of 0.3V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 600MHz, and can handle a max IC of 0.02A.
BFQ254 by NXP Semiconductors

BFQ254

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Terminal Form: FLAT;
2SC5501A-4-TR-E by Onsemi

2SC5501A-4-TR-E

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260;
MSC83301 by STMicroelectronics

MSC83301

STMicroelectronics

MSC83301 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 6W, operates up to 200 °C, and supports S-band frequencies. Its ceramic-metal sealed package ensures durability in demanding environments.
50A02CH-TL-E by Onsemi

50A02CH-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;
SD1416 by STMicroelectronics

SD1416

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
934064611115 by NXP Semiconductors

934064611115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .06 A; Additional Features: LOW NOISE;
MRF237 by Asi Semiconductor

MRF237

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-MBCY-W3;