Microsemi - 2N3866A

  1. Home
  2. Microsemi - 2N3866A
2N3866A by Microsemi

Image shown is a representation only.

Manufacturer Microsemi
Manufacturer's Part Number 2N3866A
Description RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; JEDEC-95 Code: TO-39;
Datasheet 2N3866A Datasheet
In Stock937
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-39
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
937 - -

Popular Products

Category Top Products

BFR92ALT1 by National Semiconductor

BFR92ALT1

National Semiconductor

BFR92ALT1 by National Semiconductor is an NPN RF BJT with a max power dissipation of 0.273W, min hFE of 40, and max IC of 0.025A. It's used in surface mount applications for its silicon element material and tin/lead terminal finish.
MCH4016 by Onsemi

MCH4016

Onsemi

The Onsemi MCH4016 is a NPN RF BJT transistor with 4 terminals, operating in the ultra-high frequency band up to 10GHz. It has a max power dissipation of 0.35W and can handle a collector-emitter voltage of 12V. Ideal for amplifier applications due to its high transition frequency and small outline package style.
HFA3102BZ by Intersil

HFA3102BZ

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 6;
2N2907AUBC by Vpt Components

2N2907AUBC

Vpt Components

RF Small Signal Bipolar Transistors;
934063114215 by NXP Semiconductors

934063114215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .12 A; Terminal Position: DUAL;
BFR96 by Space Power Electronics

BFR96

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .075 A; Qualification: Not Qualified;
2N3866A by Asi Semiconductor

2N3866A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
A5T4260 by Texas Instruments

A5T4260

Texas Instruments

A5T4260 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 175°C, and collector-emitter voltage of 15V.
CA3086M96 by Intersil

CA3086M96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;
SS9018E by Onsemi

SS9018E

Onsemi

SS9018E by Onsemi is a NPN BJT transistor for RF applications. With max VCEsat of 0.5V, it operates at 1100MHz fT and handles up to 0.05A IC. Ideal for amplifier circuits in L Band frequencies with a max temp of 150 °C.
BFT93W,115 by NXP Semiconductors

BFT93W,115

NXP Semiconductors

The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.
KSC1730O by Onsemi

KSC1730O

Onsemi

KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.
SD1012-3 by STMicroelectronics

SD1012-3

STMicroelectronics

NPN; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;
BFS17,235 by NXP Semiconductors

BFS17,235

NXP Semiconductors

The NXP Semiconductors BFS17,235 is a RF BJT transistor with NPN polarity and single configuration. It operates in the ultra high frequency band up to 1600 MHz, suitable for amplifier applications. With a max power dissipation of 0.3 W and operating temperature of 150°C, it offers reliable performance in small outline packages.
BFR93A by Temic Semiconductors

BFR93A

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
934067707215 by NXP Semiconductors

934067707215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
MRF237 by Motorola

MRF237

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
2N3643 by International Devices

2N3643

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
MMBTH24LT3 by Onsemi

MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.
MMPQ2369R1 by Onsemi

MMPQ2369R1

Onsemi

MMPQ2369R1 by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It features a max fT of 550 MHz, VCE of 15V, and IC of 0.5A. The transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.