Renesas Electronics - NE85633-T1B-A

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NE85633-T1B-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE85633-T1B-A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet NE85633-T1B-A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 3
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .2 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Maximum Collector-Base Capacitance: 1 pF
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