Broadcom - AT-41511

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; JEDEC-95 Code: TO-205AD;

MPS918G by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 15V and fT of 600MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.625W and operates at up to 150 °C. The package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; Maximum VCEsat: 1 V;

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Maximum Collector-Emitter Voltage: 30 V;

NXP Semiconductors' BFR96 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max VCE of 15V and IC of 0.075A, ideal for ultra-high frequency amplifier applications. The package is round, surface mountable, with 3 terminals in a disk button style.

The NXP Semiconductors BFU550XAR is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It has a max collector-emitter voltage of 12V, collector current of 0.05A, and transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

TIS63A by Texas Instruments is an NPN BJT transistor with a max fT of 500 MHz. It has a max IC of 0.03 A and hFE of 30, ideal for amplifier applications. The package is cylindrical with 3 terminals, suitable for very high frequency band circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

The Onsemi BF224RLRE is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating up to 150 °C, it has a transition frequency of 850MHz, making it ideal for high-frequency applications in very high frequency bands. The transistor's through-hole package with cylindrical shape and bottom terminal position ensures easy installation and reliable performance.

SMMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and a transition frequency of 650MHz. It is designed for amplifier applications, featuring a small outline package with gull wing terminals for surface mount assembly in ultra-high-frequency circuits.

MPSH10RLRM by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Its package is cylindrical, suitable for ultra-high frequency applications at up to 150 °C operating temperature. Ideal for RF amplification in communication systems.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Terminal Form: FLAT;

LA733P by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, hFE of 200, and operates at up to 150 °C. The package is cylindrical with through-hole terminals and collector-emitter voltage of 48V.

CPH6003A-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.8W and min hFE of 100. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.

MPS5179 by Onsemi is a NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and operates up to 150 °C. The package is cylindrical with through-hole terminals and collector-emitter voltage of 12V.

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;

55GN01FA by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 0.25W, hFE of 100, and fT of 5500MHz. The package is small outline plastic/epoxy with dual terminal position and can operate up to 150 °C.

BFP450H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, IC of 0.15A, and VCE of 4V. Ideal for amplifier circuits in small outline packages with Gull Wing terminals.

MMBTH10-4LT1 by Onsemi is an NPN RF BJT with a max fT of 800 MHz. It has a max IC of 0.025 A and hFE of 120, suitable for UHF applications. This small outline transistor operates up to 150 °C, making it ideal for high-frequency circuits in compact designs.

BFP740H6327XTSA1 by Infineon Technologies is an NPN RF BJT with a Gp of 19.5 dB, ideal for amplifier applications in the C band. It features a hFE of 160, fT of 44 GHz, and can operate b/w -55 to 150°C. The transistor has a max Vce of 4.2V and IC of 0.045A, making it suitable for high-frequency amplification needs.