Broadcom - AT-64020

STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .15 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 185 W; Maximum Collector Current (IC): 8.5 A; No. of Elements: 1;

STMicroelectronics' AM1011-070 is an NPN RF BJT with a single configuration for switching applications. It offers a min power gain of 6.7 dB, can handle up to 8A collector current, and operates in L Band frequencies. The transistor comes in a ceramic-metal-sealed co-fired package with flange mount style, suitable for high-power dissipation up to 200W at temperatures up to 250 °C.

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 8.5 A; Minimum Power Gain (Gp): 6.5 dB;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.7 W; Maximum Collector Current (IC): .75 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Additional Features: WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; No. of Terminals: 4; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .3 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND; Maximum Operating Temperature: 200 Cel;

SD4013 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and max power dissipation of 70W. Operating in the ultra-high frequency band, it has a max collector-emitter voltage of 30V. Ideal for applications requiring high-power amplification in RF circuits.

BLX69A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3.5 A, operates up to 200 °C, and achieves a min power gain of 4 dB in the ultra-high frequency band. Its round, flat package ensures efficient thermal management.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 134 W; Maximum Collector Current (IC): 6 A; Additional Features: WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .25 A; Highest Frequency Band: C BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Case Connection: BASE; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Terminal Form: FLAT; Qualification: Not Qualified;

STMicroelectronics' MSC81010 is a NPN RF BJT with 29W power dissipation, ideal for L Band amplification. Featuring 1A max collector current, hFE of 15, and 10pF collector-base capacitance, it operates up to 200 °C. The package is ceramic-metal co-fired with a round shape and flat terminals for post/stud mounting.