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Manufacturer | Broadcom |
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Manufacturer's Part Number | ATF-55143-TR1 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON; |
Datasheet | ATF-55143-TR1 Datasheet |
In Stock | 1,137 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .1 A |
Sub-Category: | FET RF Small Signal |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 4 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | C BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | SOURCE |
Maximum Power Dissipation Ambient: | .27 W |
Minimum Power Gain (Gp): | 15.5 dB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 5 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .1 A |