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Manufacturer | Eudyna Devices |
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Manufacturer's Part Number | FHX35X |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: GALLIUM ARSENIDE; |
Datasheet | FHX35X Datasheet |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 8.5 dB |
Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM ARSENIDE |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum DS Breakdown Voltage: | 4 V |
Qualification: | Not Qualified |
Terminal Position: | UPPER |
Package Style (Meter): | UNCASED CHIP |
JESD-30 Code: | R-XUUC-N |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | DEPLETION MODE |
Additional Features: | LOW NOISE, HIGH RELIABILITY |
Highest Frequency Band: | KU BAND |
Peak Reflow Temperature (C): | NOT SPECIFIED |