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| Manufacturer | Eudyna Devices |
|---|---|
| Manufacturer's Part Number | FHX35X |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: GALLIUM ARSENIDE; |
| Datasheet | FHX35X Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 8.5 dB |
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum DS Breakdown Voltage: | 4 V |
| Qualification: | Not Qualified |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | DEPLETION MODE |
| Additional Features: | LOW NOISE, HIGH RELIABILITY |
| Highest Frequency Band: | KU BAND |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









