Broadcom - AWT-13034R

  1. Home
  2. Broadcom - AWT-13034R
AWT-13034R by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AWT-13034R
Description WIDE BAND LOW POWER; Minimum Operating Frequency: 5000 MHz; Maximum Voltage Standing Wave Ratio: 2; Construction: MODULE; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 13000 MHz;
Datasheet AWT-13034R Datasheet
In Stock204
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Minimum Operating Frequency: 5000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 13000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
204 - -

Popular Products

Category Top Products

MW7IC930NR1 by Freescale Semiconductor

MW7IC930NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;
XF1001-SC-0G0T by M/a-com Technology Solutions

XF1001-SC-0G0T

M/a-com Technology Solutions

XF1001-SC-0G0T by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
GALI-2+ by Mini-circuits

GALI-2+

Mini-circuits

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.
HMC478ST89E by Hittite Microwave

HMC478ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;
BGA231N7E6330XTSA1 by Infineon Technologies

BGA231N7E6330XTSA1

Infineon Technologies

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
GALI-21+ by Mini-circuits

GALI-21+

Mini-circuits

GALI-21+ by Mini-circuits is a wideband low power RF amplifier with 11.5 dB gain, suitable for frequencies from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.5, making it ideal for RF and microwave applications requiring compact surface-mount components.
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;
TQP7M9102 by Qorvo

TQP7M9102

Qorvo

TQP7M9102 by Qorvo is a wide band medium power RF amplifier with 15 dB gain, operating from 400 MHz to 4000 MHz. It can handle up to 27 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.
ALM-1412-BLKG by Broadcom

ALM-1412-BLKG

Broadcom

ALM-1412-BLKG by Broadcom is a GAAS RF amplifier with 11dB gain, operating from 0-1575MHz. It has a max input power of 15dBm and requires 1/2.85V supply. Ideal for wideband low-power applications due to its 50Ω impedance and plastic/epoxy package construction.
SBB2089Z by Qorvo

SBB2089Z

Qorvo

The Qorvo SBB2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 24 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications, this component features a surface-mount package with nickel palladium gold finish.
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
XP1039-QJ-0G0T by M/a-com Technology Solutions

XP1039-QJ-0G0T

M/a-com Technology Solutions

XP1039-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15.5 dB gain, operating from 5600 MHz to 7100 MHz. It can handle up to 25 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
QPA1011 by Qorvo

QPA1011

Qorvo

Qorvo's QPA1011 is a wide band high power RF amplifier with 28 dB gain and 30 dBm CW input power. Operating from 7900 to 11000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & microwave systems, with a temperature range of -40 to 85°C.
TQP3M9037 by Qorvo

TQP3M9037

Qorvo

TQP3M9037 by Qorvo is a wide band medium power RF amplifier with 18.5 dB gain, operating from 700 MHz to 6000 MHz. It has a max input power of 22 dBm and operates at temperatures ranging from -40°C to 105°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
MMG20241HT1 by Freescale Semiconductor

MMG20241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
HMC788ALP2E by Analog Devices

HMC788ALP2E

Analog Devices

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.
HMC565LC5TR by Analog Devices

HMC565LC5TR

Analog Devices

HMC565LC5TR by Analog Devices is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It has a max input power of 10 dBm and operates on a 3V supply, drawing 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
ADL8106ACEZ-R7 by Analog Devices

ADL8106ACEZ-R7

Analog Devices

WIDE BAND LOW POWER;
TCBT-14+ by Mini-circuits

TCBT-14+

Mini-circuits

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.