Broadcom - AWT-18254

  1. Home
  2. Broadcom - AWT-18254
AWT-18254 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AWT-18254
Description WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 2000 MHz; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2.2; Maximum Operating Frequency: 18000 MHz; Construction: MODULE;
Datasheet AWT-18254 Datasheet
In Stock127
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.2
Construction: MODULE
Minimum Operating Frequency: 2000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 18000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
127 - -

Popular Products

Category Top Products

SGA-3363 by Rf Micro Devices

SGA-3363

Rf Micro Devices

SGA-3363 by RF Micro Devices is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, has a max input power of 18 dBm, and requires a 2.6V power supply. This component is ideal for applications requiring high-frequency signal amplification in compact electronic devices.
TQL9092 by Qorvo

TQL9092

Qorvo

The Qorvo TQL9092 is a wide band low power RF amplifier with 21 dB gain and 50 ohm impedance. It operates from 600 MHz to 4200 MHz, handling up to 33 dBm CW input power. Suitable for various applications requiring high-performance RF amplification in plastic/epoxy packages.
MBC13916NT1 by NXP Semiconductors

MBC13916NT1

NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.
HMC635LC4 by Hittite Microwave

HMC635LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
HMC462 by Analog Devices

HMC462

Analog Devices

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.
SMA3103-TL-E by Onsemi

SMA3103-TL-E

Onsemi

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
TGA2237-SM by Triquint Semiconductor

TGA2237-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;
MMG15241HT1 by Freescale Semiconductor

MMG15241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;
HMC506LP4TR by Hittite Microwave

HMC506LP4TR

Hittite Microwave

NARROW BAND LOW POWER;
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;
HMC441LP3E by Hittite Microwave

HMC441LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 13500 MHz;
HMC1040LP3CETR by Hittite Microwave

HMC1040LP3CETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;
HMC635LC4TR by Analog Devices

HMC635LC4TR

Analog Devices

Analog Devices' HMC635LC4TR is a wide band low power RF amplifier with 24 terminals, operating at temperatures from -55 to 70°C. Utilizing GaAs technology, it requires a 5V power supply and features a ceramic package for surface mount applications in RF & microwave systems.
MGA-72543-TR1G by Broadcom

MGA-72543-TR1G

Broadcom

Broadcom's MGA-72543-TR1G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.
QPA1010D by Qorvo

QPA1010D

Qorvo

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.
HMC451LP3ETR by Analog Devices

HMC451LP3ETR

Analog Devices

HMC451LP3ETR by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18 GHz. With a max input power of 10 dBm, it's ideal for wideband low-power applications in RF and microwave systems requiring surface mount components.
SPF-5122Z by Qorvo

SPF-5122Z

Qorvo

Qorvo's SPF-5122Z is a GAAS RF amplifier with 11.2dB gain, operating from 50MHz to 4GHz. It has a max input power of 27dBm and operates on a 5V supply, ideal for wideband medium-power applications in RF & microwave systems.
HMC465LP5ETR by Hittite Microwave

HMC465LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
BGU8052X by NXP Semiconductors

BGU8052X

NXP Semiconductors

WIDE BAND LOW POWER;
ADL8105ACPZN-R7 by Analog Devices

ADL8105ACPZN-R7

Analog Devices

WIDE BAND LOW POWER;