Broadcom - AWT-18635

Analog Devices' HMC863ALC4 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for RF and microwave applications requiring high performance in the -40 to 85°C temperature range.

HMC1082LP4E by Analog Devices is a wide band medium power RF amplifier with 20 dB gain. It operates from 5V supply, covering frequencies from 5500 MHz to 18000 MHz. This component, housed in a plastic/epoxy package, is ideal for RF and microwave applications requiring high performance amplification.

Qorvo's TQP7M9106 is a wide band high power RF amplifier with 19 dB gain, operating from 50 MHz to 1500 MHz. It can handle up to 30 dBm CW input power and has a max VSWR of 10. Ideal for applications requiring high power amplification in RF & microwave systems.

Mini-circuits' PGA-103+ is a wideband low-power RF amplifier with 14.7 dB gain, operating from 50 MHz to 4 GHz. It can handle up to 26 dBm CW input power and has a temperature range of -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Broadcom's MGA-72543-TR1G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;

XB1007-QT-0G00 by M/a-com is a GAAS technology RF amplifier with 23 dB gain, operating from 4-11 GHz. It has a max input power of 20 dBm and operates b/w -55 to 85°C. Ideal for wideband medium power applications requiring surface mounting features.

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

The NXP Semiconductors MHT2012NT1 is a RF amplifier with 29.7 dB gain, operating b/w 2400-2500 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications in the RF & Microwave field. The component is constructed with plastic/epoxy material and features surface mounting for ease of installation.

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.

Analog Devices' HMC6981LS6 is a wide band high power RF amplifier with 23 dB gain, operating from 15-20 GHz. It has a max input power of 18 dBm and operates on a 5.5V supply, drawing up to 1100 mA. Ideal for applications requiring high power amplification in the RF & Microwave domain.

SP9711 by Api Technologies is a wide band low power RF amplifier with 10 dB gain. It operates b/w 1000-2000 MHz, handles up to 10 dBm CW input power, and has a VSWR of 2. Ideal for applications requiring high frequency amplification in temperatures ranging from -55 to 85°C.

Analog Devices' HMC902LP3ETR is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it ideal for RF & microwave applications requiring high performance in a compact package.

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;

Qorvo's SPF-5122Z is a GAAS RF amplifier with 11.2dB gain, operating from 50MHz to 4GHz. It has a max input power of 27dBm and operates on a 5V supply, ideal for wideband medium-power applications in RF & microwave systems.