Broadcom - AWT-19134R

Analog Devices' HMC516 is a GAAS RF amplifier with 18dB gain, operating from 7-17GHz. It has a max input power of 5dBm and requires a 3V supply, drawing 88mA. Ideal for wideband low-power applications in RF & microwave systems due to its high performance and gold terminal finish.

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Gain: 22 dB;

Analog Devices' HMC478ST89ETR is a wide band low power RF amplifier with 11 dB gain, operating from 0 to 4000 MHz. It has a max input power of 5 dBm and operates on a 5V supply with a current draw of 82 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

RF/Microwave Amplifiers;

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;

AMMP-6220-TR1 by Broadcom is a wide band low power RF amplifier with 22 dB gain, operating frequency range of 6-20 GHz. It features a max input power of 15 dBm and requires a 3V power supply. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

NARROW BAND LOW POWER;

GALI-51F by Mini-circuits is a wide band low power RF amplifier with a gain of 14 dB. It operates from 0 MHz to 4000 MHz and can handle a max input power of 13 dBm. This surface mount component is commonly used in RF and microwave applications requiring amplification.

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.

NARROW BAND LOW POWER;