Broadcom - MGA-685T6-TR2G

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.

GALI-6F+ by Mini-circuits is a wide band low power RF amplifier with 10 dB gain, operating from 0 to 4000 MHz. It has a max input power of 20 dBm and VSWR of 2.2, suitable for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC1040CHIPS is a wide band low power RF amplifier with 19 dB gain, suitable for frequencies ranging from 20-44 GHz. It can handle up to 5 dBm CW input power and operates in temperatures from -55 to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

Analog Devices' HMC498LC4 is a GAAS RF amplifier with 18dB gain, operating from 17-24GHz. It has a max input power of 10dBm and operates on a 5V supply. This wideband medium-power device is ideal for RF and microwave applications requiring high performance in a compact ceramic package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);

Analog Devices' HMC799LP3E is a wide band low power RF amplifier with 42 dB gain. Operating from -40°C to 85°C, it covers frequencies from 0 MHz to 700 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.

WIDE BAND MEDIUM POWER;

MAAM-011112-TR0500 by M/a-com Technology Solutions is a wide band low power RF amplifier with 21 dB gain. It operates b/w 20-37 GHz, suitable for various RF & microwave applications. With a max input power of 0 dBm and operating temperature range from -40 to 85°C, it offers reliable performance in diverse environments.

XP1050-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain, operating from 7-9 GHz. It can handle up to 25 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;

Analog Devices' HMC478ST89ETR is a wide band low power RF amplifier with 11 dB gain, operating from 0 to 4000 MHz. It has a max input power of 5 dBm and operates on a 5V supply with a current draw of 82 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e4; Minimum Operating Temperature: -55 Cel; Gain: 14 dB;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.