Broadcom - MSA-1104

XP1044-QL-0N00 by M/a-com Technology Solutions is a RF & Microwave Amplifier with 16.5 dB Gain, 23 dBm Max Input Power (CW), and operates b/w 3500-6000 MHz. Ideal for narrow band medium power applications due to its COMPONENT construction and Matte Tin (Sn) terminal finish.

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.

RF3931 by Rf Micro Devices is a ceramic module with a wide band high power RF or microwave device type. It has a max input power of 37 dBm and a gain of 15 dB. This amplifier operates within a frequency range of 0 MHz to 3000 MHz and is suitable for various RF and microwave applications.

ALM-1412-BLKG by Broadcom is a GAAS RF amplifier with 11dB gain, operating from 0-1575MHz. It has a max input power of 15dBm and requires 1/2.85V supply. Ideal for wideband low-power applications due to its 50Ω impedance and plastic/epoxy package construction.

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.

Mini-circuits LEE-29 is a wide band low power RF amplifier with 13.3 dB gain, handling up to 15 dBm CW input power. It operates from 0 to 8000 MHz, with VSWR of 1.6 and characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring compact, high-performance amplification in temperature range -40 to 85°C.

WIDE BAND HIGH POWER;

Analog Devices' HMC960LP4ETR is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It has 24 terminals, matte tin finish, and operates b/w -40°C to +85°C. Ideal for applications requiring surface mount components in RF and microwave systems.

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

ZHL-1-2W by Mini-circuits is a COAXIAL RF amplifier with 29 dB Gain, 10 dBm CW input power, and VSWR of 2. Ideal for wideband high-power applications from 5 MHz to 500 MHz. Operating temperature range: -20°C to +65°C.

HMC462LP5E by Analog Devices is a wide band low power RF amplifier with 10 dB gain. It operates from 2-20 GHz, handling up to 18 dBm CW input power. This component, made of GaAs technology, is ideal for RF and microwave applications requiring surface mounting features.

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;

WIDE BAND LOW POWER; Technology: GAAS; Gain: 17.5 dB; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;

NPA1006A by M/a-com Technology Solutions is a wide band high power RF amplifier with 12.5 dB gain, operating from 20 MHz to 1000 MHz. It features a max VSWR of 15 and operates on a 28V power supply, suitable for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Characteristic Impedance: 50 ohm;