BIPOLAR RF & Microwave Amplifiers 801

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC326MS8GETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		160 mA	COMPONENT	5	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3000 MHz	4500 MHz
MAX2640EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	300 MHz	1500 MHz
MAX2640EUT+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	300 MHz	1500 MHz
HMC505LP4E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	6800 MHz	7400 MHz
AG303-86G	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	20.4 dB	-40 Cel	MATTE TIN	HIGH RELIABILITY	e3	0 MHz	6000 MHz
MMG3014NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		160 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18.5 dB		MATTE TIN		e3	40 MHz	4000 MHz
MSA-1105	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers	85 Cel		-25 Cel	Tin (Sn)		e3	50 MHz	1300 MHz
MSA-1105-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		10 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	1300 MHz
RF6886TR7	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
RF6886TR13	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
ADA-4643-BLKG	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1	18 dBm	1.6		COMPONENT	3.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		15.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	2500 MHz
SGA-3363Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.6	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5500 MHz
SGA3363Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.6	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				0 MHz	5500 MHz
ABA-52563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	20 dBm	1.4	43 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3500 MHz
NBB-300-T1	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	BIPOLAR	1	20 dBm	2.5		COMPONENT	3.9	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-45 Cel	Matte Tin (Sn)		e3	0 MHz	12000 MHz
ABA-52563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	20 dBm	1.4	43 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3500 MHz
MSA-0686-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	20 mA	COMPONENT	3.5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers		16.5 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	800 MHz
RF6886SR	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
SGA-3563Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm	1.2	39 mA	COMPONENT	3.2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	19.5 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA-6489Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	18 dBm	1.8	83 mA	COMPONENT	5.1	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.4 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	3500 MHz
SGA3563Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	3.2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	19.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	0 MHz	5000 MHz
SGA6489Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		83 mA	COMPONENT	5.1	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.4 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	3500 MHz
BGM1013,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
HMC3653LP3BE	Analog Devices	WIDE BAND LOW POWER				BIPOLAR	1	12 dBm			COMPONENT			50 ohm		85 Cel	12 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	7000 MHz	15000 MHz
HMC505LP4ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
INA-10386	Agilent Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.5	55 mA	COMPONENT	6	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel		-25 Cel				0 MHz	1800 MHz
BGM1013	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
SGA3463Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.9	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA-3463Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.9	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
GALI-39	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	2.3		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	17.7 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	7000 MHz
SGA-3363	Rf Micro Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.6	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				0 MHz	5500 MHz
HMC3653LP3BETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1			55 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3	7000 MHz	15000 MHz
MMG3012NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		17.5 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
NBB-400-T1	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	BIPOLAR	1	20 dBm	1.9		COMPONENT	3.9	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-45 Cel				0 MHz	8000 MHz
AD8354ACPZ-REEL7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		34 mA	COMPONENT	3/5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17.3 dB	-40 Cel	MATTE TIN		e3	1 MHz	2700 MHz
ADL5545ARKZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		70 mA	COMPONENT	5	TO-243	50 ohm		150 Cel	24.8 dB	-40 Cel	MATTE TIN		e3	30 MHz	6000 MHz
MMZ09312BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	14 dBm		83 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		29 dB		MATTE TIN		e3	400 MHz	1000 MHz
MSA-1105-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		10 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	50 MHz	1300 MHz
MSA-1105-STRG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		10 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	50 MHz	1300 MHz
UPC2710TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		29 mA	COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
BGB741L7ESD-E6327	Infineon Technologies		SURFACE MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1			7.2 mA		3	LCC7(UNSPEC)		RF/Microwave Amplifiers				Gold (Au)		e4
INA-10386-TR1	Agilent Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.5	55 mA	COMPONENT	6	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	23 dB	-25 Cel				0 MHz	1800 MHz
MSA-0686-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.7	20 mA	COMPONENT	3.5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers		16.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	800 MHz
SST12CP11-QVCE	Microchip Technology		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1					5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2630EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2630EUS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz
MMA25312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1			138 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
UPC2710TB-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	1.67	29 mA	COMPONENT	5	TSSOP6,.08	50 ohm		85 Cel	33 dB	-40 Cel					1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.