BIPOLAR RF & Microwave Amplifiers 801

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MMZ25332BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			412 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
MSA-1105-STR	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.7	70 mA	COMPONENT	5.5	SL,4GW-LD,.145CIR	50 ohm	RF/Microwave Amplifiers		10 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	1300 MHz
NBB-400-SR	Qorvo		SURFACE MOUNT	4	CERAMIC	BIPOLAR		1					3.9	SL,4LEAD,.07SQ		RF/Microwave Amplifiers	85 Cel		-45 Cel
SGA-2463Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		23 mA	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	17.1 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA2463Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		23 mA	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
ABA-52563-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.4		COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	3500 MHz
ADA-4643-TR2G	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	18 dBm	1.6		COMPONENT	3.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		15.5 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	2500 MHz
CA30063	Harris Semiconductor			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
CA3006/3	Rca Solid State			12	METAL	BIPOLAR	MIL-STD-883 Class B (Modified)				25 mA		+-6	CAN12,.23		RF/Microwave Amplifiers	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
MMG3001NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	1.17	300 mA	COMPONENT	5.6	TO-243	50 ohm			18 dB					40 MHz	3600 MHz
SBB3089ZSQ	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	20 dBm		46 mA	COMPONENT	4.2	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.9 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	50 MHz	6000 MHz
SGA-6286Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel				0 MHz	5500 MHz
SGA2486Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		23 mA	COMPONENT	2.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	17.8 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA6286Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		83 mA	COMPONENT	4	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5500 MHz
UPC8179TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.4 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
AVT-55689-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		86 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	Tin (Sn)		e3	50 MHz	6000 MHz
MMG3006NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	28 dBm		960 mA	COMPONENT	5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers		16.5 dB		MATTE TIN		e3	400 MHz	2400 MHz
HMC311ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		74 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	MATTE TIN		e3	0 MHz	6000 MHz
ABA-51563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.2	28 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3500 MHz
ABA-54563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	20 dBm	1.2	90 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	3400 MHz
LM703LN	National Semiconductor		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR								DIP8,.3		RF/Microwave Amplifiers	70 Cel		0 Cel	Tin/Lead (Sn/Pb)		e0
MHW6342TN	NXP Semiconductors	WIDE BAND HIGH POWER	PANEL MOUNT	7	PLASTIC/EPOXY	BIPOLAR		1	6.25 dBm		340 mA	MODULE	24		75 ohm		100 Cel	34.5 dB	-20 Cel				40 MHz	550 MHz
MSA-0886-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	13 dBm	1.9	40 mA	COMPONENT	7.8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers		20.5 dB		Matte Tin (Sn)		e3	0 MHz	1000 MHz
SKY65014-70LF	Skyworks Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	15 dBm	2		COMPONENT	4.7	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel					6000 MHz
SKY65116-21	Skyworks Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			1300 mA	COMPONENT	3.6	LCC12,.32SQ,75/64	50 ohm		85 Cel	35 dB	-40 Cel	Gold (Au)	HIGH RELIABILITY	e4	390 MHz	500 MHz
HMC327MS8GETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC476SC70ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		42 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel				0 MHz	6000 MHz
AD8353ACP-REEL7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		52 mA	COMPONENT	3/5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.6 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	1 MHz	2700 MHz
HMC415LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	13 dBm			COMPONENT	3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	4900 MHz	5900 MHz
HMC471MS8G	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		2	14 dBm			COMPONENT	8	TSSOP8,.19	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	5000 MHz
HMC311LP3ERTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1			74 mA		5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC311ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1			74 mA		5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC480ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1					8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC478ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1					5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC482ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1					8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC589ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1			102 mA		5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC471MS8GETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		2					8	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC311ST89ERTR	Analog Devices		SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1			74 mA		5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC476SC70E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		42 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	6000 MHz
HMC313ERTR	Analog Devices		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1					5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC481MP86E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		85 mA	COMPONENT	8	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	5000 MHz
HMC580ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		110 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	MATTE TIN		e3	0 MHz	1000 MHz
HMC476MP86ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	5 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	6000 MHz
HMC481ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1					8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC475ST89	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	17 dBm		135 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	4500 MHz
HMC469MS8GTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1					8	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC450QS16GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	23 dB	-40 Cel	MATTE TIN		e3	800 MHz	1000 MHz
HMC740ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN		e3	50 MHz	3000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.