NXP Semiconductors - MMZ25332BT1

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;

ALM-1412-BLKG by Broadcom is a GAAS RF amplifier with 11dB gain, operating from 0-1575MHz. It has a max input power of 15dBm and requires 1/2.85V supply. Ideal for wideband low-power applications due to its 50Ω impedance and plastic/epoxy package construction.

WIDE BAND LOW POWER; Technology: GAAS; Maximum Input Power (CW): 5 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Terminal Finish: Gold (Au);

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Maximum Operating Frequency: 8000 MHz;

NARROW BAND HIGH POWER;

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

Qorvo's RF3827TR7 is a GAAS wide band medium power amplifier with 20.5 dB gain, operating from 5 MHz to 1500 MHz. It has a max input power of 13 dBm and VSWR of 20, suitable for surface mount applications in RF & microwave systems requiring up to 8V supply voltage.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.25;

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;

NPA1003QA by M/a-com Technology Solutions is a wide band high power RF amplifier with 14 dB gain, operating from 20 MHz to 1500 MHz. Constructed using HEMT technology, it has a max VSWR of 10 and operates b/w -40°C to 85°C. Ideal for applications requiring surface mount packaging in RF & microwave systems.

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER;

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.