Qorvo - TQL9092

Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;

Broadcom's ABA-31563-BLKG is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 3500 MHz. It has a max input power of 15 dBm and VSWR of 1.5, suitable for surface mount applications in RF & microwave systems.

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.

RF/Microwave Amplifiers;

NARROW BAND HIGH POWER;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;

Qorvo's QPA1010 is a GAN technology RF amplifier with 21.1 dB gain, operating from 7900-11000 MHz. It offers 30 dBm CW input power, VSWR of 3, and -1.8 to 24V power supplies. Ideal for wideband high-power applications with a surface-mount package body material made of plastic/epoxy.

RF/Microwave Amplifiers;

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 10;

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;

Sirenza Microdevices' SGL-0363Z is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, handling up to 18 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.