BIPOLAR RF & Microwave Amplifiers 801

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MMG3003NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		205 mA	COMPONENT	6.2	TO-243	50 ohm	RF/Microwave Amplifiers		19.3 dB		Matte Tin (Sn)		e3	40 MHz	3600 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2711	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		16 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13.9 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2771	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2771,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
MMG3015NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	12 dBm		120 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
BGA2003	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR						COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
BGA2715	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		5.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Matte Tin (Sn)		e3	100 MHz	3000 MHz
BGA2709,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2031/1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			23 dBm	3.5		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB		Tin (Sn)		e3	800 MHz	2500 MHz
BGA2711,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		16 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13.9 dB		Tin (Sn)		e3		3600 MHz
BGA2714	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
MMG3010NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		63 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		12 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2716	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2712	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2031/1,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB		Tin (Sn)		e3	800 MHz	2500 MHz
MMG3009NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.3 dB		MATTE TIN		e3	0 MHz	6000 MHz
MMG3011NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		48 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		13.5 dB		MATTE TIN		e3	0 MHz	6000 MHz
MMG3008NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		48 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		17 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2012,115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
MMG3005NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		520 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		14 dB					800 MHz	2200 MHz
MMG3007NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		55 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
BGA2011	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			20 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3
BGA2002,115	NXP Semiconductors				PLASTIC/EPOXY	BIPOLAR	AEC-Q100	1					2.5	SOT-343R		RF/Microwave Amplifiers				Tin (Sn)		e3
MMG3013NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	12 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		16 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2771T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2716T/R	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			21 mA		5	TSSOP6,.08		RF/Microwave Amplifiers				Tin (Sn)		e3
BGA2712,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA420	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR			0 dBm		8 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	11 dB	-65 Cel	TIN		e3	100 MHz	1800 MHz
BGA612-E6327	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1			80 mA		5	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGA420H6327	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR		1			8 mA		3	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGA616	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	10 dBm		80 mA	COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17.5 dB	-65 Cel	Tin (Sn)		e3	0 MHz	2700 MHz
BGA614	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17.5 dB	-65 Cel	Tin (Sn)		e3	0 MHz	2400 MHz
BGA420-E6433	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR		1			8 mA		3	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGB741L7ESD	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	BIPOLAR		1			7.2 mA	COMPONENT	3	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB	-55 Cel	GOLD		e4	50 MHz	5500 MHz
BGA430	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB	-65 Cel				900 MHz	2150 MHz
PMB4819	Infineon Technologies		SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR					480 mA		3/4.5	TSSOP10,.19,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
BGA427-E6433	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR		1			9.4 mA		3	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGA312	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	10 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2000 MHz
BGA612-E6433	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR		1					5	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGA420E6327	Infineon Technologies	NARROW BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	0 dBm		8 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	11 dB	-65 Cel	Matte Tin (Sn)		e3	100 MHz	1800 MHz
BGA310	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	8 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2400 MHz
PMB2362V1.1	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR				1.5		COMPONENT	3/3.3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
CGY21	Infineon Technologies			4	METAL	BIPOLAR					200 mA		4.5	CAN4,.2		RF/Microwave Amplifiers	150 Cel			Tin/Lead (Sn/Pb)		e0
BGA427E6327	Infineon Technologies	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		9.4 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	28.5 dB	-65 Cel	Matte Tin (Sn)		e3	100 MHz	1800 MHz
BGA425	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			-10 dBm		9.5 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	18.5 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	1800 MHz
BGA416	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		1	8 dBm			COMPONENT	3	SOT-143R	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB	-65 Cel				900 MHz	1800 MHz
BGA427	Infineon Technologies	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR			-10 dBm		9.4 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	18.5 dB	-65 Cel	TIN		e3	100 MHz	1800 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.