BIPOLAR RF & Microwave Amplifiers 801

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
STM1645-10	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR		13 dBm	2		MODULE	18,28	FLANGE MT,2.3X0.8	50 ohm	RF/Microwave Amplifiers	70 Cel	30 dB	-35 Cel				1625 MHz	1665 MHz
STB7102	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1				COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	16.7 dB	-30 Cel		IT CAN ALSO OPERATE AT 2040 TO 2135 MHZ		100 MHz	2500 MHz
STB7104	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			3.4 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel		-30 Cel				100 MHz	2500 MHz
STM400-05B	STMicroelectronics				PLASTIC/EPOXY	BIPOLAR				425 mA		20	FLNG,2.21"H.SPACE		RF/Microwave Amplifiers
TSH690IDT	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
STM351-2	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR		14.77 dBm	1.5	425 mA		20	FLNG,2.21"H.SPACE	50 ohm	RF/Microwave Amplifiers	60 Cel	21 dB	-20 Cel				325 MHz	351 MHz
STB7101	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	2.75	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	20.5 dB	-40 Cel				900 MHz	1900 MHz
STB7720L	STMicroelectronics		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1					3.3	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-30 Cel
STB7103	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			4.9 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel		-30 Cel				100 MHz	2500 MHz
SMA427ATR	STMicroelectronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1	-10 dBm			COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17 dB	-65 Cel	Matte Tin (Sn)		e3	1000 MHz	2000 MHz
STB7102TR	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			5.3 mA	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	16.7 dB	-30 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 2040 TO 2135 MHZ	e0	100 MHz	2500 MHz
STM376-2	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR		14.77 dBm	1.5	425 mA		20	FLNG,2.21"H.SPACE	50 ohm	RF/Microwave Amplifiers	60 Cel	21 dB	-20 Cel				350 MHz	376 MHz
TSH691ID	STMicroelectronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR						2.7	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0
TSH690ID	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
STB7001	STMicroelectronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1		1.5		COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers		0 dB			THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS		925 MHz	960 MHz
SA5219D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
MRFIC0915T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm		2.5 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
BGM1011	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		28 dB		Tin (Sn)		e3
BGM1014,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
SA5200D	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		20 dBm		8.4 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	1200 MHz
BGU2003	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1			15 mA	COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		13 dB
UAA3592HN	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	0 dBm		50 mA	COMPONENT	2.7,3.6	LCC16,.16SQ,25		RF/Microwave Amplifiers	70 Cel		-30 Cel				1920 MHz	1980 MHz
BGM1014	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
SA5209D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
SA5219D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
SA5219N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				50 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	700 MHz
BGM1012	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
SA5204AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	350 MHz
SA5209N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				55 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	850 MHz
MRFIC0916T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm		5.6 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
BGM1012,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
SA5205AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				0 MHz	600 MHz
SA5209D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
MHW8342	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR				350 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel				40 MHz	870 MHz
MHW1345N	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR	1	5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	20 Cel				10 MHz	200 MHz
MHW1346	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR	1			350 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	34.5 dB	-20 Cel				5 MHz	200 MHz
MHW6182	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR		21.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				40 MHz	550 MHz
MHW1345	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR	1	5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-20 Cel				10 MHz	200 MHz
MHW6342T	NXP Semiconductors	WIDE BAND HIGH POWER	PANEL MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1	6.25 dBm		340 mA	MODULE	24		75 ohm		100 Cel	34.5 dB	-20 Cel				40 MHz	550 MHz
MC13144D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				12 mA	COMPONENT	3	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	6 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0		2000 MHz
MMA20312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		Matte Tin (Sn)		e3	1800 MHz	2200 MHz
MMA20312BVT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		MATTE TIN		e3	1800 MHz	2200 MHz
BGA2001	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR					COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		19.5 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
BGA2031/1T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB					800 MHz	2500 MHz
MMG3004NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		275 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		15 dB					400 MHz	2200 MHz
BGA2012	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
BGA2709	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.