NXP Semiconductors - SA5209D

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.

WIDE BAND LOW POWER; Minimum Operating Temperature: -45 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.9;

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Agilent Technologies' MGA-86576 is a RF & Microwave Amplifier with GaAs technology, 5V power supply, and 22mA max current. It has a metal package for surface mount applications in various electronic devices.

Qorvo's SPF-5189Z is a GAAS RF amplifier with 11.3 dB gain, operating from 50 MHz to 4 GHz. It has a max input power of 27 dBm and operates on a 5V supply. Ideal for wideband medium-power applications, it features surface mounting and a plastic/epoxy package body.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 5 dBm;

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; No. of Functions: 2;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Broadcom's MGA-86576-STR is a wide band low power RF amplifier with 20 dB gain, operating from 1500 MHz to 8000 MHz. It has a max input power of 13 dBm and VSWR of 2.5, making it ideal for applications requiring high frequency amplification in RF & microwave systems.

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;

SGA-3363 by RF Micro Devices is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, has a max input power of 18 dBm, and requires a 2.6V power supply. This component is ideal for applications requiring high-frequency signal amplification in compact electronic devices.

Qorvo's RF5110GSR is a wideband medium power amplifier with 33dB gain, operating from 150MHz to 960MHz. It has a max input power of 13dBm and VSWR of 10, suitable for RF & microwave applications requiring high performance in a compact form factor. The hybrid construction and surface mount feature make it ideal for various communication systems.

Qorvo's NBB-400 is a ceramic-packaged RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates b/w -45°C to +85°C temperatures and requires a 3.9V supply voltage.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;