NXP Semiconductors - BGU2003

  1. Home
  2. NXP Semiconductors - BGU2003
BGU2003 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGU2003
Description NARROW BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 2.5; Maximum Supply Current: 15 mA;
Datasheet BGU2003 Datasheet
In Stock2,017
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
Construction: COMPONENT
Package Equivalence Code: SOT-343R
Technology: BIPOLAR
Characteristic Impedance: 50 ohm
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 15 mA
RF or Microwave Device Type: NARROW BAND LOW POWER
Gain: 13 dB
Power Supplies (V): 2.5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,017 - -

Popular Products

Category Top Products

HMC606LC5TR by Analog Devices

HMC606LC5TR

Analog Devices

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
SMA70-2 by Tyco Electronics M/a-com

SMA70-2

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Maximum Operating Frequency: 250 MHz; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Additional Features: LOW NOISE; Gain: 6.5 dB;
NJG1150UA2-TE1 by Nisshinbo Micro Devices

NJG1150UA2-TE1

Nisshinbo Micro Devices

NARROW BAND LOW POWER;
HMC506LP4E by Hittite Microwave

HMC506LP4E

Hittite Microwave

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;
CMPA2735075F1 by Wolfspeed

CMPA2735075F1

Wolfspeed

NARROW BAND HIGH POWER;
TQP9111 by Qorvo

TQP9111

Qorvo

Qorvo's TQP9111 is a narrow band medium power RF amplifier with 29.8 dB gain, operating from 1800-2700 MHz. It can handle up to 23 dBm CW input power and operates b/w -40 to 105°C. Ideal for RF & microwave applications requiring high gain and power handling capabilities.
QPA2612TR7 by Qorvo

QPA2612TR7

Qorvo

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.
SGA3363ZSR by Rf Micro Devices

SGA3363ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;
TRF37A75IDSGT by Texas Instruments

TRF37A75IDSGT

Texas Instruments

TRF37A75IDSGT by Texas Instruments is a wide band low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 40 MHz to 6 GHz, handling up to 10 dBm CW input power. Ideal for applications requiring surface mount components in RF and microwave systems.
SP9711 by Api Technologies

SP9711

Api Technologies

SP9711 by Api Technologies is a wide band low power RF amplifier with 10 dB gain. It operates b/w 1000-2000 MHz, handles up to 10 dBm CW input power, and has a VSWR of 2. Ideal for applications requiring high frequency amplification in temperatures ranging from -55 to 85°C.
HMC374SC70E by Analog Devices

HMC374SC70E

Analog Devices

Analog Devices' HMC374SC70E is a GAAS RF amplifier with 15dB gain, operating from 300MHz to 3GHz. It has a max input power of 15dBm and operates on a 3.3V supply. This wideband medium-power device is ideal for RF and microwave applications requiring surface mount components.
CMD264P3 by Custom Mmic Design Services

CMD264P3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;
MGA-30689-BLKG by Broadcom

MGA-30689-BLKG

Broadcom

Broadcom's MGA-30689-BLKG is a GAAS RF amplifier with 13.7 dB gain, operating from 40 MHz to 3000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems.
PSA4-5043+ by Mini-circuits

PSA4-5043+

Mini-circuits

Mini-circuits PSA4-5043+ is a wideband low power RF amplifier with 16.5 dB gain, operating from 50 MHz to 4000 MHz. It can handle up to 23 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
HMC994A by Analog Devices

HMC994A

Analog Devices

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;
HMC863ALC4 by Analog Devices

HMC863ALC4

Analog Devices

Analog Devices' HMC863ALC4 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for RF and microwave applications requiring high performance in the -40 to 85°C temperature range.
BGB741L7ESD-E6327 by Infineon Technologies

BGB741L7ESD-E6327

Infineon Technologies

BGB741L7ESD-E6327 by Infineon Technologies is a RF & Microwave Amplifier with 3V power supply, 7 terminals, and gold finish. It operates on bipolar technology with a max current of 7.2mA. Ideal for surface mount applications in various electronic devices.