BIPOLAR RF & Microwave Amplifiers 801

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MAX2641EUT

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

6.4 mA

COMPONENT

3/5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12.4 dB

-40 Cel

TIN LEAD

e0

1400 MHz

2500 MHz

MAX2656EXT+T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

15.2 mA

COMPONENT

3/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

Matte Tin (Sn)

e3

1800 MHz

2000 MHz

MAX2246EBL-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

9

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

6

144 mA

COMPONENT

3

BGA9,3X3,20

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn63Pb37)

e0

2400 MHz

2500 MHz

MAX2430IEE

Maxim Integrated

WIDE BAND MEDIUM POWER

SURFACE MOUNT

28

PLASTIC/EPOXY

BIPOLAR

3 dBm

8

70 mA

3.3/5

SSOP28,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

31 dB

-20 Cel

Tin/Lead (Sn/Pb)

e0

800 MHz

1000 MHz

MAX2654EXT+T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

9.2 mA

COMPONENT

3/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12.7 dB

-40 Cel

NICKEL GOLD PALLADIUM

1400 MHz

1700 MHz

MAX2631EUK+

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

1.25

11 mA

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

Matte Tin (Sn)

LOW NOISE

e3

800 MHz

1000 MHz

MAX2651EUB-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

BIPOLAR

2

9.6 mA

COMPONENT

3

TSSOP10,.19,20

50 ohm

RF/Microwave Amplifiers

85 Cel

16 dB

-40 Cel

Tin/Lead (Sn/Pb)

IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ

e0

925 MHz

960 MHz

TA4004F(TE85L)

Toshiba

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

TA4001F(TE85L)

Toshiba

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

24 mA

5

SOT-143R

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4012AFE(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

8.5 mA

2

TSSOP6,.06,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4012FU

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

8.5 mA

COMPONENT

2

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4016AFE(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

8 mA

2

TSSOP6,.06,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

TA4008F

Toshiba

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

2.5

12 mA

COMPONENT

3

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

1640 MHz

1700 MHz

TA4000F(TE85L,F)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 mA

5

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

TA4012F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

8.5 mA

COMPONENT

2

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4011F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

COMPONENT

2

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

8 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4011FU(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4003F(TE85L)

Toshiba

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4023F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

36 mA

COMPONENT

5

TSSOP8,.16

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

TA4013FU

Toshiba

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

14 mA

COMPONENT

2

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4004F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

COMPONENT

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

13 dB

-40 Cel

700 MHz

TA4003F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

COMPONENT

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4017FT

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

2

25 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

700 MHz

TA4020FT

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

7 mA

COMPONENT

3

SOT-143R

RF/Microwave Amplifiers

85 Cel

8.5 dB

-40 Cel

1500 MHz

2600 MHz

TA4000F(TE85L)

Toshiba

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

15 mA

5

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

TA4022F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

42 mA

COMPONENT

5

TSSOP8,.16

50 ohm

RF/Microwave Amplifiers

85 Cel

16 dB

-40 Cel

TA4011AFE

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

4.5 mA

COMPONENT

2

TSSOP6,.06,20

50 ohm

RF/Microwave Amplifiers

85 Cel

8 dB

-40 Cel

TA4011FU

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4011AFE(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

4.5 mA

2

TSSOP6,.06,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4013F

Toshiba

NARROW BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

14 mA

COMPONENT

2

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4000F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

15 mA

COMPONENT

5

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

LOW NOISE

TA4002F(TE85L)

Toshiba

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

20 mA

5

SOT-143R

RF/Microwave Amplifiers

85 Cel

-40 Cel

TA4012AFE

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

8.5 mA

COMPONENT

2

TSSOP6,.06,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

UPC1688G-T1

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

24 mA

5

SOT-143R

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

UPC1676B

Renesas Electronics

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

24 mA

5

SL,8LEAD,.15SQ

RF/Microwave Amplifiers

125 Cel

-55 Cel

UPC8230TU-E2-A

Renesas Electronics

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

8 mA

COMPONENT

3

FL8,.09,20

RF/Microwave Amplifiers

85 Cel

16 dB

-40 Cel

UPC1659A

Renesas Electronics

4

METAL

BIPOLAR

27 mA

10

CAN4,.1

RF/Microwave Amplifiers

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

e0

UPC2709TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

32 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

22 dB

-40 Cel

Tin/Bismuth (Sn/Bi)

e6

UPC2708T-E3

Renesas Electronics

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

33 mA

5

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

UPC1678GV-E1

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

10 dBm

60 mA

COMPONENT

5

SSOP8,.2

50 ohm

RF/Microwave Amplifiers

85 Cel

21 dB

-45 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

2000 MHz

UPC8182TB

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

38 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

HIGH RELIABILITY

900 MHz

2900 MHz

UPC2745T

Renesas Electronics

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 mA

3

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

UPC2712T-E3

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

15 mA

COMPONENT

5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

2600 MHz

UPC2726T-E3

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

0 dBm

15 mA

COMPONENT

5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

400 MHz

1600 MHz

UPC1653P

Renesas Electronics

BIPOLAR

25 mA

10

DIE OR CHIP

RF/Microwave Amplifiers

125 Cel

-55 Cel

UPC2709TB

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

32 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

22 dB

-40 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

2300 MHz

UPC2711TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

15 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

30 dB

-40 Cel

Tin/Bismuth (Sn/Bi)

HIGH RELIABILITY

e6

1000 MHz

2900 MHz

UPC8151TB-E3-A

Renesas Electronics

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5.8 mA

3

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.