Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
6.4 mA |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.4 dB |
-40 Cel |
TIN LEAD |
e0 |
1400 MHz |
2500 MHz |
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|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
15.2 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
1800 MHz |
2000 MHz |
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Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
9 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
6 |
144 mA |
COMPONENT |
3 |
BGA9,3X3,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn63Pb37) |
e0 |
2400 MHz |
2500 MHz |
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Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
3 dBm |
8 |
70 mA |
3.3/5 |
SSOP28,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
31 dB |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
800 MHz |
1000 MHz |
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|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
9.2 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.7 dB |
-40 Cel |
NICKEL GOLD PALLADIUM |
1400 MHz |
1700 MHz |
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|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
1.25 |
11 mA |
COMPONENT |
3 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
800 MHz |
1000 MHz |
||||
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
9.6 mA |
COMPONENT |
3 |
TSSOP10,.19,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ |
e0 |
925 MHz |
960 MHz |
|||||||
Toshiba |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Toshiba |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
24 mA |
5 |
SOT-143R |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8.5 mA |
2 |
TSSOP6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
8.5 mA |
COMPONENT |
2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 mA |
2 |
TSSOP6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Toshiba |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
2.5 |
12 mA |
COMPONENT |
3 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1640 MHz |
1700 MHz |
|||||||||
|
Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 mA |
5 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
8.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
2 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Toshiba |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
36 mA |
COMPONENT |
5 |
TSSOP8,.16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
||||||||||||
Toshiba |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
14 mA |
COMPONENT |
2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
700 MHz |
|||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
25 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
700 MHz |
|||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
7 mA |
COMPONENT |
3 |
SOT-143R |
RF/Microwave Amplifiers |
85 Cel |
8.5 dB |
-40 Cel |
1500 MHz |
2600 MHz |
||||||||||
Toshiba |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
15 mA |
5 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
42 mA |
COMPONENT |
5 |
TSSOP8,.16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
4.5 mA |
COMPONENT |
2 |
TSSOP6,.06,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
2 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
4.5 mA |
2 |
TSSOP6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Toshiba |
NARROW BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
14 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
15 mA |
COMPONENT |
5 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
LOW NOISE |
||||||||||||||
Toshiba |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
20 mA |
5 |
SOT-143R |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8.5 mA |
COMPONENT |
2 |
TSSOP6,.06,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
24 mA |
5 |
SOT-143R |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
24 mA |
5 |
SL,8LEAD,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
|||||||||||||||||
|
Renesas Electronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
8 mA |
COMPONENT |
3 |
FL8,.09,20 |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
|||||||||||
Renesas Electronics |
4 |
METAL |
BIPOLAR |
27 mA |
10 |
CAN4,.1 |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
32 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
e6 |
||||||||
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
33 mA |
5 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
60 mA |
COMPONENT |
5 |
SSOP8,.2 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
2000 MHz |
||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
38 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
HIGH RELIABILITY |
900 MHz |
2900 MHz |
||||||||
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 mA |
3 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
15 mA |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
2600 MHz |
|||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
0 dBm |
15 mA |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
400 MHz |
1600 MHz |
|||||||
Renesas Electronics |
BIPOLAR |
25 mA |
10 |
DIE OR CHIP |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
||||||||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
32 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
2300 MHz |
||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
15 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
30 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
1000 MHz |
2900 MHz |
|||||
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5.8 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.