Renesas Electronics - UPC2726T-E3

  1. Home
  2. Renesas Electronics - UPC2726T-E3
UPC2726T-E3 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPC2726T-E3
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 0 dBm;
Datasheet UPC2726T-E3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 400 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 15 mA
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Terminals: 6
Maximum Input Power (CW): 0 dBm
Package Equivalence Code: TSOP6,.11,37
Technology: BIPOLAR
Characteristic Impedance: 50 ohm
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1600 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 11 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TGA2214-CP by Qorvo

TGA2214-CP

Qorvo

WIDE BAND HIGH POWER;
MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.
MGA-635P8-TR1G by Broadcom

MGA-635P8-TR1G

Broadcom

Broadcom's MGA-635P8-TR1G is a GAAS RF amplifier with 16.5 dB gain, operating from 2300 to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V supply, making it ideal for wideband medium-power applications in RF and microwave systems. With a compact surface-mount package and high temperature range (-40 to 85°C), it offers reliable performance in various environments.
HMC475ST89E by Analog Devices

HMC475ST89E

Analog Devices

HMC475ST89E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 4500 MHz, handling up to 17 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in the temperature range of -40°C to 85°C.
ERA-50SM+ by Mini-circuits

ERA-50SM+

Mini-circuits

ERA-50SM+ by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45 to 85°C.
HMC637ALP5E by Analog Devices

HMC637ALP5E

Analog Devices

HMC637ALP5E by Analog Devices is a wide band medium power RF amplifier with a gain of 12 dB. It has a max input power of 25 dBm and operates in temperatures ranging from -40 to 85°C. This component is suitable for applications requiring amplification in the frequency range of 0-6000 MHz.
BGA715N7E6327XTSA2 by Infineon Technologies

BGA715N7E6327XTSA2

Infineon Technologies

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.
HMC505LP4ETR by Analog Devices

HMC505LP4ETR

Analog Devices

Analog Devices' HMC505LP4ETR is a RF amplifier with 24 terminals, operating from -40°C to 85°C. It features a narrow band low power design, powered by 3V supply. Ideal for surface mount applications in RF and microwave systems.
QPA1003P by Qorvo

QPA1003P

Qorvo

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.
CMD192C5 by Custom Mmic Design Services

CMD192C5

Custom Mmic Design Services

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;
HMC963LC4TR-R5 by Analog Devices

HMC963LC4TR-R5

Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.
NJG1150UA2-TE1 by Nisshinbo Micro Devices

NJG1150UA2-TE1

Nisshinbo Micro Devices

NARROW BAND LOW POWER;
SMA3103-TL-E by Onsemi

SMA3103-TL-E

Onsemi

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
HMC8325 by Analog Devices

HMC8325

Analog Devices

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.
HMC903LP3E by Analog Devices

HMC903LP3E

Analog Devices

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.
LT5524EFE#PBF by Linear Technology

LT5524EFE#PBF

Linear Technology

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;
HMC516LC5 by Analog Devices

HMC516LC5

Analog Devices

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.
TGA2567-SM by Qorvo

TGA2567-SM

Qorvo

The Qorvo TGA2567-SM is a wide band medium power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 22 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.
MAX2232EEE by Maxim Integrated

MAX2232EEE

Maxim Integrated

MAX2232EEE by Maxim Integrated is a RF amplifier with 23.9 dB gain, operating frequency range of 800-1000 MHz, and VSWR of 1.5. It is ideal for narrowband medium power applications requiring a max input power of 10 dBm in plastic/epoxy package suitable for surface mounting.
HMC441LC3B by Hittite Microwave

HMC441LC3B

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;