NXP Semiconductors - BGA2031/1

  1. Home
  2. NXP Semiconductors - BGA2031/1
BGA2031/1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGA2031/1
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 23 dBm;
Datasheet BGA2031/1 Datasheet
In Stock431
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 800 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Mounting Feature: SURFACE MOUNT
Maximum Voltage Standing Wave Ratio: 3.5
No. of Terminals: 6
Maximum Input Power (CW): 23 dBm
Package Equivalence Code: TSSOP6,.08
Technology: BIPOLAR
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 2500 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 23 dB
Power Supplies (V): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
431 - -

Popular Products

Category Top Products

MW7IC2040NR1 by Freescale Semiconductor

MW7IC2040NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);
ALM-32220 by Broadcom

ALM-32220

Broadcom

ALM-32220 by Broadcom is a wide band high power RF amplifier with 13.5 dB gain, operating from 1700 to 2700 MHz. It can handle up to 28 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & Microwave systems.
GALI-6F+ by Mini-circuits

GALI-6F+

Mini-circuits

GALI-6F+ by Mini-circuits is a wide band low power RF amplifier with 10 dB gain, operating from 0 to 4000 MHz. It has a max input power of 20 dBm and VSWR of 2.2, suitable for surface mount applications in RF & microwave systems.
SGA-6489Z by Sirenza Microdevices

SGA-6489Z

Sirenza Microdevices

SGA-6489Z by Sirenza Microdevices is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and VSWR of 1.8, suitable for surface mount applications in RF & microwave systems.
HMC794LP3ETR by Hittite Microwave

HMC794LP3ETR

Hittite Microwave

WIDE BAND LOW POWER;
HMC998APM5E by Analog Devices

HMC998APM5E

Analog Devices

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.
MGA-62563-TR2G by Broadcom

MGA-62563-TR2G

Broadcom

Broadcom's MGA-62563-TR2G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3000 MHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3/5V supplies.
HMC460LC5 by Analog Devices

HMC460LC5

Analog Devices

Analog Devices' HMC460LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC441LC3B by Analog Devices

HMC441LC3B

Analog Devices

Analog Devices' HMC441LC3B is a wide band medium power RF amplifier with 10 dB gain, operating from 6-18 GHz. It has a max input power of 15 dBm and operates on a 5V supply, drawing 115 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
TSS-53LNB+ by Mini-circuits

TSS-53LNB+

Mini-circuits

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;
BGU7005,115 by NXP Semiconductors

BGU7005,115

NXP Semiconductors

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.
HMC441LC3B by Hittite Microwave

HMC441LC3B

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;
CMPA2560025F by Wolfspeed

CMPA2560025F

Wolfspeed

Wolfspeed's CMPA2560025F is a wide band high power RF amplifier module with 19.5 dB gain, operating from 2500 to 6000 MHz. It has a max VSWR of 5 and features a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in the RF & Microwave domain.
MMG20241HT1 by Freescale Semiconductor

MMG20241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
BGA231N7E6330XTSA1 by Infineon Technologies

BGA231N7E6330XTSA1

Infineon Technologies

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
SGA-3463Z by Sirenza Microdevices

SGA-3463Z

Sirenza Microdevices

SGA-3463Z by Sirenza Microdevices is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC463LP5E by Hittite Microwave

HMC463LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;
RF5110GTR7 by Qorvo

RF5110GTR7

Qorvo

Qorvo's RF5110GTR7 is a wide band medium power amplifier with 33 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 13 dBm and VSWR of 10, suitable for RF & microwave applications. With a construction of hybrid technology and surface mounting feature, it operates at temperatures ranging from -40°C to 85°C.
ZX60-P103LN+ by Mini-circuits

ZX60-P103LN+

Mini-circuits

Mini-circuits' ZX60-P103LN+ is a COAXIAL RF amplifier with 4.5 dB Gain, 50-3000 MHz frequency range, and 21 dBm CW power input. Ideal for wideband low-power applications, it offers a VSWR of 1.8 and operates b/w -40°C to 85°C temperature range.
TQP7M9102-PCB900 by Qorvo

TQP7M9102-PCB900

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;