NXP Semiconductors - BGA2003

  1. Home
  2. NXP Semiconductors - BGA2003
BGA2003 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGA2003
Description WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: Tin (Sn); Gain: 16 dB; Maximum Operating Frequency: 1800 MHz;
Datasheet BGA2003 Datasheet
In Stock122
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 900 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Package Equivalence Code: SOT-343R
Technology: BIPOLAR
Characteristic Impedance: 50 ohm
Additional Features: LOW NOISE
Maximum Operating Frequency: 1800 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 16 dB
Power Supplies (V): 2.5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
122 - -

Popular Products

Category Top Products

XP1039-QJ-0G0T by M/a-com Technology Solutions

XP1039-QJ-0G0T

M/a-com Technology Solutions

XP1039-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15.5 dB gain, operating from 5600 MHz to 7100 MHz. It can handle up to 25 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
TQP7M9106 by Triquint Semiconductor

TQP7M9106

Triquint Semiconductor

WIDE BAND HIGH POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1500 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm; Gain: 19 dB;
MW7IC2750NBR1 by Freescale Semiconductor

MW7IC2750NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; No. of Functions: 1; Maximum Input Power (CW): 30 dBm;
AFIC901NT1 by NXP Semiconductors

AFIC901NT1

NXP Semiconductors

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.
HMC374SC70E by Analog Devices

HMC374SC70E

Analog Devices

Analog Devices' HMC374SC70E is a GAAS RF amplifier with 15dB gain, operating from 300MHz to 3GHz. It has a max input power of 15dBm and operates on a 3.3V supply. This wideband medium-power device is ideal for RF and microwave applications requiring surface mount components.
MAR-8ASM by Mini-circuits

MAR-8ASM

Mini-circuits

MAR-8ASM by Mini-circuits is a wide band low power RF amplifier with 20 dB gain, 50 ohm impedance, and 1.8 VSWR. Ideal for RF & microwave applications, it operates from -40 to 85°C, has a max input power of 13 dBm, and covers frequencies from DC to 1000 MHz.
ABA-52563-BLKG by Broadcom

ABA-52563-BLKG

Broadcom

Broadcom's ABA-52563-BLKG is a RF amplifier with 20dB gain, 1.4 VSWR, and 3500 MHz max frequency. Ideal for wideband low power applications, it operates at 5V with a max input power of 20 dBm. This component has a characteristic impedance of 50 ohms and is designed for surface mount installation.
XB1007-QT-0G00 by M/a-com Technology Solutions

XB1007-QT-0G00

M/a-com Technology Solutions

XB1007-QT-0G00 by M/a-com is a GAAS technology RF amplifier with 23 dB gain, operating from 4-11 GHz. It has a max input power of 20 dBm and operates b/w -55 to 85°C. Ideal for wideband medium power applications requiring surface mounting features.
HMC-AUH312 by Analog Devices

HMC-AUH312

Analog Devices

HMC-AUH312 by Analog Devices is a GAAS technology RF amplifier with 10 dB gain, operating from 500 MHz to 80 GHz. It has a max input power of 10 dBm and requires an 8V power supply. Ideal for wide band low power applications, this component is designed for surface mounting with a characteristic impedance of 50 ohms.
1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
HMC326MS8GE by Analog Devices

HMC326MS8GE

Analog Devices

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.
RFPA3800TR7 by Rf Micro Devices

RFPA3800TR7

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;
A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
HMC549MS8GTR by Hittite Microwave

HMC549MS8GTR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC311SC70ETR by Hittite Microwave

HMC311SC70ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;
GALI-6F+ by Mini-circuits

GALI-6F+

Mini-circuits

GALI-6F+ by Mini-circuits is a wide band low power RF amplifier with 10 dB gain, operating from 0 to 4000 MHz. It has a max input power of 20 dBm and VSWR of 2.2, suitable for surface mount applications in RF & microwave systems.
HMC564LC4TR by Analog Devices

HMC564LC4TR

Analog Devices

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
MGA-85563-BLKG by Agilent Technologies

MGA-85563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;