Analog Devices - HMC313ERTR

  1. Home
  2. Analog Devices - HMC313ERTR
HMC313ERTR by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC313ERTR
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSOP6,.11,37;
Datasheet HMC313ERTR Datasheet
In Stock844
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
No. of Terminals: 6
Package Equivalence Code: TSOP6,.11,37
Technology: BIPOLAR
Maximum Operating Temperature: 85 Cel
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -40 Cel
Power Supplies (V): 5
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
844 - -

Popular Products

Category Top Products

HMC311SC70E by Analog Devices

HMC311SC70E

Analog Devices

HMC311SC70E by Analog Devices is a GAAS RF amplifier with 11 dB gain, operating from 0 to 8000 MHz. It has a max input power of 10 dBm and operates on a 5V supply with a current draw of 74 mA. Ideal for wideband low-power applications requiring surface mount installation in temperatures ranging from -40 to 85°C.
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
GALI-2 by Mini-circuits

GALI-2

Mini-circuits

GALI-2 by Mini-circuits is a wideband low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 0 to 8000 MHz, handling up to 15 dBm CW input power. Ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45°C to 85°C.
MAX2244EBL-T by Maxim Integrated

MAX2244EBL-T

Maxim Integrated

MAX2244EBL-T by Maxim Integrated is a RF amplifier with 10 dBm CW input power, 6 VSWR, and 3V supply. It operates b/w -40 to 85°C, ideal for narrow band low power applications in the frequency range of 2400-2500 MHz. The component has a surface mount package with 9 terminals and requires a max current of 205 mA.
XP1050-QJ-0G00 by M/a-com Technology Solutions

XP1050-QJ-0G00

M/a-com Technology Solutions

XP1050-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain, operating from 7-9 GHz. It can handle up to 25 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
QPA2735TR7 by Qorvo

QPA2735TR7

Qorvo

WIDE BAND LOW POWER;
HMC8413LP2FE by Analog Devices

HMC8413LP2FE

Analog Devices

HMC8413LP2FE by Analog Devices is a PHEMT RF amplifier with 17 dB gain, operating from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, suitable for wideband medium power applications. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it is ideal for RF and microwave systems requiring high performance in a small form factor.
SPF-5043Z by Sirenza Microdevices

SPF-5043Z

Sirenza Microdevices

SPF-5043Z by Sirenza Microdevices is a 50 ohm wide band low power RF amplifier with gain of 6.7 dB. It operates b/w 100 MHz to 4000 MHz, handling up to 25 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -40°C to 85°C.
MGA-81563-TR1 by Agilent Technologies

MGA-81563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
MAX2659ELT/V+ by Analog Devices

MAX2659ELT/V+

Analog Devices

Analog Devices' MAX2659ELT/V+ is a BICMOS RF amplifier with 16.5 dB gain and 50 ohm impedance. It operates at temperatures from -40 to 85 °C, with a max input power of 10 dBm. Ideal for narrow band low power applications, it has a compact surface mount package with 6 terminals.
HMC794LP3E by Analog Devices

HMC794LP3E

Analog Devices

HMC794LP3E by Analog Devices is a wide band low power RF amplifier with a max operating frequency of 2 GHz and characteristic impedance of 50 ohm. It can handle up to 13 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperature range from -40°C to 85°C.
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;
PTMA180402M-V1-R500 by Wolfspeed

PTMA180402M-V1-R500

Wolfspeed

NARROW BAND HIGH POWER;
MSA-1105 by Avantek

MSA-1105

Avantek

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5.5;
MGA-87563-BLKG by Broadcom

MGA-87563-BLKG

Broadcom

Broadcom's MGA-87563-BLKG is a GAAS RF amplifier with 50 ohm impedance, operating from 500 MHz to 4 GHz. It has a CW input power of 13 dBm and VSWR of 1.8, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features a surface-mount package with matte tin terminals, making it ideal for various RF and microwave systems.
HMC788ALP2E by Hittite Microwave

HMC788ALP2E

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 10000 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT;
HMC3653LP3BE by Hittite Microwave

HMC3653LP3BE

Hittite Microwave

WIDE BAND LOW POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Characteristic Impedance: 50 ohm;
TGA2622-CP by Qorvo

TGA2622-CP

Qorvo

WIDE BAND HIGH POWER;
HMC871LC5 by Hittite Microwave

HMC871LC5

Hittite Microwave

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; JESD-609 Code: e4; Gain: 10 dB; Maximum Operating Frequency: 20000 MHz;
AFIC901NT1 by NXP Semiconductors

AFIC901NT1

NXP Semiconductors

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.