Broadcom - MSA-3111-BLKG

  1. Home
  2. Broadcom - MSA-3111-BLKG
MSA-3111-BLKG by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number MSA-3111-BLKG
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
Datasheet MSA-3111-BLKG Datasheet
In Stock162
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 0 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 1.2
No. of Terminals: 4
Maximum Input Power (CW): 13 dBm
Package Equivalence Code: TO-253
Technology: BIPOLAR
Characteristic Impedance: 50 ohm
Additional Features: HIGH RELIABILITY
Maximum Operating Frequency: 500 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 23.5 dB
Power Supplies (V): 4.5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
162 - -

Popular Products

Category Top Products

EMM5077VU by Eudyna Devices

EMM5077VU

Eudyna Devices

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 3400 MHz; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Minimum Operating Temperature: -40 Cel;
HMC998APM5E by Analog Devices

HMC998APM5E

Analog Devices

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.
MW7IC2750NBR1 by Freescale Semiconductor

MW7IC2750NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; No. of Functions: 1; Maximum Input Power (CW): 30 dBm;
CMD291P4 by Qorvo

CMD291P4

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
NBB-400-SR by Qorvo

NBB-400-SR

Qorvo

Qorvo's NBB-400-SR RF amplifier operates at 3.9V with a temp range of -45 to 85°C. Featuring bipolar tech, it has 4 terminals and surface mount capability. Ideal for applications requiring ceramic package in RF & microwave systems.
TQP9111 by Qorvo

TQP9111

Qorvo

Qorvo's TQP9111 is a narrow band medium power RF amplifier with 29.8 dB gain, operating from 1800-2700 MHz. It can handle up to 23 dBm CW input power and operates b/w -40 to 105°C. Ideal for RF & microwave applications requiring high gain and power handling capabilities.
HMC311SC70ETR by Analog Devices

HMC311SC70ETR

Analog Devices

Analog Devices' HMC311SC70ETR is a GAAS RF amplifier with 11dB gain, operating from 0-8000MHz. It has a max input power of 10dBm and requires a 5V supply, making it ideal for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40 to 85°C.
SPF5043Z by Qorvo

SPF5043Z

Qorvo

Qorvo's SPF5043Z is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.
AD8350ARMZ20 by Analog Devices

AD8350ARMZ20

Analog Devices

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.
MW7IC2750NBR1 by NXP Semiconductors

MW7IC2750NBR1

NXP Semiconductors

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
HMC1040LP3CETR by Analog Devices

HMC1040LP3CETR

Analog Devices

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.
SMA3103-TL-E by Sanyo Semiconductor

SMA3103-TL-E

Sanyo Semiconductor

WIDE BAND LOW POWER;
HELA-10D+ by Mini-circuits

HELA-10D+

Mini-circuits

HELA-10D+ by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, operating from 8 MHz to 300 MHz. It offers a max input power of 20 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring high performance amplification in a compact form factor.
SMA70-2 by Wj Communications

SMA70-2

Wj Communications

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;
ZX60-2411BM-S+ by Mini-circuits

ZX60-2411BM-S+

Mini-circuits

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.
HMC5805ALS6TR by Analog Devices

HMC5805ALS6TR

Analog Devices

Analog Devices' HMC5805ALS6TR is a wide band low power RF amplifier with 9 dB gain and 22 dBm max input power. Operating from -40 to 85°C, it covers frequencies up to 40 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
CMPA2738060F by Wolfspeed

CMPA2738060F

Wolfspeed

WIDE BAND HIGH POWER;
HMC-ALH244 by Hittite Microwave

HMC-ALH244

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 40000 MHz; Minimum Operating Temperature: -55 Cel; Additional Features: LOW NOISE; JESD-609 Code: e4; Minimum Operating Frequency: 24000 MHz;
CHA3666-QAG by United Monolithic Semiconductor Sas

CHA3666-QAG

United Monolithic Semiconductor Sas

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.
HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;