Broadcom - QCPM-9801

  1. Home
  2. Broadcom - QCPM-9801
QCPM-9801 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number QCPM-9801
Description NARROW BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel; Maximum Input Power (CW): 10 dBm;
Datasheet QCPM-9801 Datasheet
In Stock448
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 824 MHz
Characteristic Impedance: 50 ohm
Additional Features: IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 849 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Minimum Operating Temperature: -30 Cel
Gain: 19 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
448 - -

Popular Products

Category Top Products

HMC463LP5ETR by Analog Devices

HMC463LP5ETR

Analog Devices

HMC463LP5ETR by Analog Devices is a wide band low power RF amplifier with a gain of 8 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 18 dBm. This surface mount component is commonly used in RF and microwave applications.
A64 by M/a-com Technology Solutions

A64

M/a-com Technology Solutions

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: CAN4,.3; Power Supplies (V): 15; Minimum Operating Frequency: 10 MHz;
CA70-2 by Tyco Electronics M/a-com

CA70-2

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Construction: COAXIAL; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -54 Cel; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2.3;
HMC694LP4ETR by Hittite Microwave

HMC694LP4ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;
HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.
MGA-85563-BLKG by Agilent Technologies

MGA-85563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;
QPA4501SR by Qorvo

QPA4501SR

Qorvo

Qorvo's QPA4501SR is a GAN RF amplifier with 26dB gain, operating from 4400-5000MHz. It offers 12dBm CW input power and VSWR of 10, suitable for narrowband high-power applications in RF & microwave systems. The component has 36 terminals, surface-mountable in plastic/epoxy package for easy integration.
MSA-1105-TR1 by Hewlett Packard

MSA-1105-TR1

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -25 Cel;
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
SGL-0363Z by Sirenza Microdevices

SGL-0363Z

Sirenza Microdevices

Sirenza Microdevices' SGL-0363Z is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, handling up to 18 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC441LH5 by Analog Devices

HMC441LH5

Analog Devices

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.
TGA2958-SM by Qorvo

TGA2958-SM

Qorvo

Qorvo's TGA2958-SM is a GAN technology RF amplifier with 25 dB gain, operating from 13-18 GHz. It has a max input power of 20 dBm and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component features surface mounting and requires -2.7 to 20V supply voltage at 70mA max current.
SST12LP08-QXBE by Microchip Technology

SST12LP08-QXBE

Microchip Technology

SST12LP08-QXBE by Microchip is a RF amplifier with 29 dB gain, operating frequency range of 2412-2484 MHz, and 5 dBm max input power. It is designed for narrow band medium power applications, featuring a 50 ohm characteristic impedance and surface mounting feature.
TQP3M9009 by Triquint Semiconductor

TQP3M9009

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 150 mA;
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
HMC7950LS6 by Analog Devices

HMC7950LS6

Analog Devices

Analog Devices' HMC7950LS6 is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.
MGA-631P8-BLKG by Broadcom

MGA-631P8-BLKG

Broadcom

Broadcom's MGA-631P8-BLKG is a GAAS RF amplifier with 16dB gain, operating from 400MHz to 1500MHz. It has a max input power of 20dBm and uses a 4V power supply. Ideal for wideband low-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
LMV221SD/NOPB by National Semiconductor

LMV221SD/NOPB

National Semiconductor

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Package Equivalence Code: SOLCC6,.1,25;
MGA-72543-TR1 by Agilent Technologies

MGA-72543-TR1

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;