Broadcom - TO295J-CDXB

  1. Home
  2. Broadcom - TO295J-CDXB
TO295J-CDXB by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number TO295J-CDXB
Description Laser Diodes;
Datasheet TO295J-CDXB Datasheet
In Stock213
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
213 - -

Popular Products

Category Top Products

DL3147-161 by Onsemi

DL3147-161

Onsemi

DL3147-161 by Onsemi is a 660nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 70°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.
NX8571SC541-BA-A by Renesas Electronics

NX8571SC541-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1554;
TOLD120 by Toshiba

TOLD120

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .1 A;
TOLD322BCC by Toshiba

TOLD322BCC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 80 Cel;
DL-6140-201 by Onsemi

DL-6140-201

Onsemi

DL-6140-201 by Onsemi is a Laser Diode with 785nm Peak Wavelength, 0.12A Max Forward Current, and -10 to 50 °C Operating Temp. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
TOLD123R by Toshiba

TOLD123R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .08 A;
NX8571SC950-BA-A by Renesas Electronics

NX8571SC950-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel;
TOLD322BBB by Toshiba

TOLD322BBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 70 Cel;
STH61005Z by Infineon Technologies

STH61005Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A; Minimum Operating Temperature: -40 Cel;
DL-7140-201 by Onsemi

DL-7140-201

Onsemi

DL-7140-201 by Onsemi is a Laser Diode with 0.1A max forward current, 785nm peak wavelength, and -10 to 60 °C operating temp range. Ideal for applications requiring through hole mounting of laser diodes.
SFH4410 by Infineon Technologies

SFH4410

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: InGaAs; Spectral Bandwidth: 3.5 m; Peak Wavelength (nm): 1300;
TOLD322AAA by Toshiba

TOLD322AAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: 0 Cel;
NX8571SC716-BA-AZ by Renesas Electronics

NX8571SC716-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1572; Minimum Operating Temperature: -5 Cel;
CQF25B/D11 by NXP Semiconductors

CQF25B/D11

NXP Semiconductors

CQF25B/D11 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
NX8570SC634-BA-AZ by Renesas Electronics

NX8570SC634-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1563; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
NX8570SC976-BA-A by Renesas Electronics

NX8570SC976-BA-A

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1597; Maximum Forward Current: .3 A;
TOLD321ABA by Toshiba

TOLD321ABA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
CQF23/D52 by NXP Semiconductors

CQF23/D52

NXP Semiconductors

CQF23/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
SDL7032-001 by Onsemi

SDL7032-001

Onsemi

SDL7032-001 by Onsemi is an 830nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8570SA397-CA by Renesas Electronics

NX8570SA397-CA

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1540; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel;