Broadcom - TO295J-DAXC

  1. Home
  2. Broadcom - TO295J-DAXC
TO295J-DAXC by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number TO295J-DAXC
Description Laser Diodes;
Datasheet TO295J-DAXC Datasheet
In Stock158
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
158 - -

Popular Products

Category Top Products

TOLD9201(S) by Toshiba

TOLD9201(S)

Toshiba

LASER DIODE; Nominal Output Power: 5 W; No. of Functions: 1; Peak Wavelength (nm): 670;
SDL8031-201 by Onsemi

SDL8031-201

Onsemi

SDL8031-201 by Onsemi is an 810nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for medical devices, industrial sensors, and optical communication applications.
SDL4034-101 by Onsemi

SDL4034-101

Onsemi

SDL4034-101 by Onsemi is an 800nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
NX8570SC358-BA-AZ by Renesas Electronics

NX8570SC358-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1535; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
NX8563LB389 by Renesas Electronics

NX8563LB389

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1539;
TOLD171 by Toshiba

TOLD171

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .095 A;
SDL8033-101 by Onsemi

SDL8033-101

Onsemi

SDL8033-101 by Onsemi is an 870nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8563LF469-BA-A by Renesas Electronics

NX8563LF469-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1546;
NX8571SC716-BA-AZ by Renesas Electronics

NX8571SC716-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1572; Minimum Operating Temperature: -5 Cel;
NX8570SA509-CA by Renesas Electronics

NX8570SA509-CA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1551;
NX8570SC501-BA by Renesas Electronics

NX8570SC501-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .3 A;
NX8570SC537D-BA-A by Renesas Electronics

NX8570SC537D-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1553;
DL-3150-133 by Onsemi

DL-3150-133

Onsemi

DL-3150-133 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It operates at -10 to 70 °C, with max forward current of 0.045A and voltage of 2.3V. Ideal for applications requiring THROUGH HOLE MOUNT in optoelectronics.
TOLD321CBB by Toshiba

TOLD321CBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -10 Cel;
54-00152 by Lumentum Operations

54-00152

Lumentum Operations

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Spectral Bandwidth: 3 m; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 810;
TOLD155A by Toshiba

TOLD155A

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .115 A;
NDL7701P1D by Renesas Electronics

NDL7701P1D

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.3 V;
NX8567SAM366-CC by Renesas Electronics

NX8567SAM366-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1536; Maximum Forward Current: .15 A;
NX8567SAS334-CC by Renesas Electronics

NX8567SAS334-CC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1533; Maximum Operating Temperature: 70 Cel;
NX8567SAM541-BC by Renesas Electronics

NX8567SAM541-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1554; Maximum Response Time: .000000000125 s;