Broadcom - VMMK-2303-BLKG

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;

AD8350ARMZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Qorvo's SBB4089Z is a wide band low power RF amplifier with 13.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and operates on a 5V supply with a current draw of 92 mA. Ideal for applications requiring surface mount construction in RF and microwave systems.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

MMG3H21NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 18.3 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 12 dBm input power, and draws a max of 110 mA at 5 V. Ideal for applications requiring high-frequency signal amplification in compact setups.

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 70 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC505LP4 is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a VSWR of 2, operates at frequencies b/w 6800-7400 MHz, and has a characteristic impedance of 50Ω. Ideal for narrowband low-power applications requiring surface mount technology.

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 1200 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 6 dBm; Minimum Operating Frequency: 10 MHz;

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.

Broadcom's MGA-61563-BLKG is a GAAS RF amplifier with 6.9dB gain, operating from 100MHz to 6GHz. It has a max input power of 18dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. With a compact plastic/epoxy package and surface mounting feature, it offers high performance with 48mA supply current at 3/5V.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;

Analog Devices' HMC635LC4TR is a wide band low power RF amplifier with 24 terminals, operating at temperatures from -55 to 70°C. Utilizing GaAs technology, it requires a 5V power supply and features a ceramic package for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

TGA2526 by Qorvo is a GAAS wide band low power RF amplifier with a gain of 17.5 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 22 dBm. This component is commonly used in RF and microwave applications.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4500 MHz;

NXP Semiconductors' MMG3002NT1 is a wide band low power RF amplifier with 19.3 dB gain, handling up to 12 dBm CW input power. Operating from 40 MHz to 3600 MHz, it's ideal for RF and microwave applications requiring high performance in a compact form factor.

Mitsubishi Electric's RA20H8994M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 896-941 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and characteristic impedance of 50 ohms.

The NXP Semiconductors MHT2012NT1 is a RF amplifier with 29.7 dB gain, operating b/w 2400-2500 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications in the RF & Microwave field. The component is constructed with plastic/epoxy material and features surface mounting for ease of installation.