Broadcom - WS1213

  1. Home
  2. Broadcom - WS1213
WS1213 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number WS1213
Description NARROW BAND LOW POWER; Minimum Operating Frequency: 887 MHz; Maximum Input Power (CW): 10 dBm; Maximum Voltage Standing Wave Ratio: 2.5; Characteristic Impedance: 50 ohm; Gain: 15 dB;
Datasheet WS1213 Datasheet
In Stock321
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.5
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 887 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 925 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Minimum Operating Temperature: -30 Cel
Gain: 15 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
321 - -

Popular Products

Category Top Products

EMM5077VU by Sumitomo Electric Industries

EMM5077VU

Sumitomo Electric Industries

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.
SKY65981-11 by Skyworks Solutions

SKY65981-11

Skyworks Solutions

NARROW BAND LOW POWER;
SGA-3363-TR1 by Sirenza Microdevices

SGA-3363-TR1

Sirenza Microdevices

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;
AH202-F by Triquint Semiconductor

AH202-F

Triquint Semiconductor

AH202-F by Triquint Semiconductor is a wide band medium power RF amplifier with 14 dB gain. It operates b/w 30 MHz to 2200 MHz, handling up to 16 dBm CW input power. This component, housed in a plastic/epoxy package, is ideal for applications requiring high frequency amplification in RF and microwave systems.
ADL8107ACPZN by Analog Devices

ADL8107ACPZN

Analog Devices

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.
HMC505LP4ETR by Hittite Microwave

HMC505LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.
1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
SPF-5122Z by Qorvo

SPF-5122Z

Qorvo

Qorvo's SPF-5122Z is a GAAS RF amplifier with 11.2dB gain, operating from 50MHz to 4GHz. It has a max input power of 27dBm and operates on a 5V supply, ideal for wideband medium-power applications in RF & microwave systems.
HMC383LC4TR by Hittite Microwave

HMC383LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
MSA-1105 by Avantek

MSA-1105

Avantek

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5.5;
MGA-82563-TR1 by Broadcom

MGA-82563-TR1

Broadcom

Broadcom's MGA-82563-TR1 is a GAAS RF amplifier with 12dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications. The component features a plastic/epoxy package body, surface mounting feature, and operates b/w -40°C to 85°C.
HMC1082LP4E by Hittite Microwave

HMC1082LP4E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;
HMC478MP86ETR by Analog Devices

HMC478MP86ETR

Analog Devices

Analog Devices' HMC478MP86ETR is a wide band low power RF amplifier with 5V power supply, operating from -40°C to 85°C. This bipolar technology device has 4 terminals and surface mounting feature, making it ideal for RF & microwave applications requiring high performance in a compact package.
MGA-87563-BLKG by Agilent Technologies

MGA-87563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.8;
AMMP-6222-TR1G by Broadcom

AMMP-6222-TR1G

Broadcom

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.
HMC498LC4TR by Hittite Microwave

HMC498LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 5;
MAX2630EUS+T by Analog Devices

MAX2630EUS+T

Analog Devices

Analog Devices' MAX2630EUS+T is a wide band low power RF amplifier with 11dB gain, operating b/w 800-1000MHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for surface mount applications in RF & microwave systems. With a compact package and low supply current of 11mA at 3V, it's ideal for high-frequency signal amplification.
HMC326MS8GETR by Hittite Microwave

HMC326MS8GETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Minimum Operating Frequency: 3000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 15 dBm; JESD-609 Code: e3;